
Allicdata Part #: | FGA15N120ANTDTU-F109-ND |
Manufacturer Part#: |
FGA15N120ANTDTU-F109 |
Price: | $ 1.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 30A 186W TO3P |
More Detail: | IGBT NPT and Trench 1200V 30A 186W Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 1519 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 1.99000 |
10 +: | $ 1.93030 |
100 +: | $ 1.89050 |
1000 +: | $ 1.85070 |
10000 +: | $ 1.79100 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT and Trench |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 15A |
Power - Max: | 186W |
Switching Energy: | 3mJ (on), 600µJ (off) |
Input Type: | Standard |
Gate Charge: | 120nC |
Td (on/off) @ 25°C: | 15ns/160ns |
Test Condition: | 600V, 15A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 330ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
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Introduction
The FGA15N120ANTDTU-F109 is a type of Insulated Gate Bipolar Transistor (IGBT). For applications in the industrial sector, these devices are quite popular due to their increased efficiency, high current capabilities and improved immunity to the effects of ESD and noise.
Application Fields
IGBTs can be used in a variety of industrial applications such as motor control, power supplies, renewable energy sources and automotive applications. This particular module is ideal for applications including battery charger designs, residential and small commercial power supplies, instrument, medical equipment and lighting control.
The FGA15N120ANTDTU-F109 can be used for switching, amplification and rectifying for AC, DC, or various combinations of the two. Specifically, it can be used for switching applications such as AC motor drives, home appliance drives, elevator motor controls, UPS systems and adjustable speed motor drives.
Functions
The FGA15N120ANTDTU-F109 is a high power device that is capable of blocking voltages up to 1200V. It is also capable of handling high current loads up to 15A. It has a wide range of operating temperatures, from -55°C to 150°C. The FGA15N120ANTDTU-F109 is also designed to be immune from most electromagnetic interference (EMI) and is suitable for industrial environments.
Working Principle
The FGA15N120ANTDTU-F109 works by utilizing two major components. First, there is the transistor. It is an electronic device made up of three terminals: the collector, the emitter and the base. When a bias voltage is applied across the gate and the emitter, the current flow increases. This increase in current is known as the transistor\'s “gain”.
The second component is the diode. It is a simple device that consists of two terminals, the anode and the cathode. It controls the flow of current in the device by allowing current to flow in one direction but not the other. When used in conjunction with a transistor, it controls the voltage drop across the device.
The FGA15N120ANTDTU-F109 is composed of these two components. When a voltage is applied across these components, the current can be regulated. The transistor controls the amount of current that can flow into the device, while the diode regulates the amount of voltage across the device. This is the main principle of operation for the FGA15N120ANTDTU-F109.
Conclusion
The FGA15N120ANTDTU-F109 is a type of Insulated Gate Bipolar Transistor (IGBT) that is used for a variety of industrial applications. It is capable of handling high voltage and high current loads, and is designed to be immune from most electromagnetic interference (EMI). The main principle of operation for this device is the combination of a transistor and a diode, which control the current and voltage, respectively.
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