
FGA15N120FTDTU Discrete Semiconductor Products |
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Allicdata Part #: | FGA15N120FTDTU-ND |
Manufacturer Part#: |
FGA15N120FTDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 30A 220W TO3PN |
More Detail: | IGBT Trench Field Stop 1200V 30A 220W Through Hole... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 220W |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 575ns |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 100nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 45A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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FGA15N120FTDTU Application Field and Working Principle
The FGA15N120FTDTU is a member of the field-gate avalanche-rated (FGA) family of 1200V insulated gate bipolar transistors (IGBTs). This device is a low-cost, short-circuit rated transistor, ideal for high-working switch or power electronic circuits. It has excellent dynamic characteristics and a low gate-emitter voltage (less than 1V). The device has outstanding performance in many demanding design applications.
FGA15N120FTDTU Applications
The FGA15N120FTDTU is applied in a variety of applications requiring high power handling capability, such as motor drive, high-frequency power conversion, solar power, UPS, DC chopper and buck converters. Specific application fields include:
- Solar Power Inverters - Used in solar inverter designs to provide high current capability with low losses.
- DC-DC Converters - Used to provide high power levels in switch mode power supplies (SMPS).
- Motor Drive - Used to drive high power motors in applications such as washing machines and industrial robots.
- Power Conversion - Used in high-frequency power conversion designs.
FGA15N120FTDTU Working Principle
The FGA15N120FTDTU utilizes an insulated-gate bipolar transistor (IGBT) design to drive the load. This device has a very low turn-on voltage and can be used in a variety of applications due to its high efficiency and simple design. When a voltage is applied across the gate and the emitter of the FGA15N120FTDTU, it produces a controlled flow of electrical current. This current flow is regulated by the gate voltage and its junction temperature, which is monitored and controlled by an internal temperature sensor. As current is applied to the gate, it turns on the device and ultimately regulates how much current is drawn from the source. The FGA15N120FTDTU can be used to drive both AC and DC power supplies with high efficiency.
The FGA15N120FTDTU is also designed to handle higher chucking levels than standard IGBTs in order to meet the demands of the more rugged applications. This increased chucking efficiency prevents long-term device damage during high-current events. The FGA15N120FTDTU is designed for use with a wide variety of gate driver circuits, providing deep integration into power electronic designs.
Conclusion
The FGA15N120FTDTU is a low-cost, short-circuit rated transistor with excellent dynamic characteristics and an extremely low gate-emitter voltage. This device is ideal for a variety of applications, including motor drive, high-frequency power conversion, solar power, UPS systems, and DC chopper and buck converters. The FGA15N120FTDTU utilizes an IGBT design to efficiently drive the load with a low turn-on voltage and excellent current handling capabilities. This device is also equipped with higher chucking levels than standard IGBTs, allowing it to withstand harsh high-current conditions with ease.
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