FGA20S120M

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An FGA20S120M is a transistor belonging to the family of Insulated Gate Bipolar Transistors (IGBTs). This type of transistor is a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). It is a single component, meaning it is composed of one MOSFET and one BJT. Due to its design, it has higher switching power than other transistors. Therefore, it is often used in applications that require fast and efficient power switching, such as motor drives and power supplies.

The FGA20S120M has a continuous current rating of 20A, a voltage rating of 1200 V and an on-resistance of 35.6 mΩ. It is an easy to use and cost effective device which makes it suitable for many applications including telecommunications, power supply, and industrial equipment. It is also suitable for switching inductive and capacitive loads, making it a popular choice for automotive and traction applications.

The FGA20S120M has a working principle that consists of the following: First, a small current is passed through the on-gate, which causes electrons to be injected into the N-type body below the gate. This results in a high concentration of negative charges, which creates an electric field that, in turn, forces holes in the body towards the drain, creating an “on” zone. The current flowing in this zone is limited by the resistance of the channel, so that the transistor turns “on” and “off” at a predetermined threshold, or cut-off point. This process is known as the avalanche breakdown and is a key feature of IGBTs.

The FGA20S120M is also capable of making fast switching, even with relatively low voltage levels. This is because the electric field created in the channel and the electric field created by the gate act in opposition to each other, allowing for quick switching and improving the efficiency of the devices. This is due to the electric field strength being weaker in the off-state, resulting in lower power losses and improved switching speeds.

Due to its high load current and low on-resistance, the FGA20S120M is often used in automotive applications such as converters, battery chargers, and start-stop systems. It is also used in a variety of industrial applications, including converters, welding machines, HVAC systems, power supplies and batteries.

In summary, the FGA20S120M is a single Insulated Gate Bipolar Transistor (IGBT) with a continuous current rating of 20A, a voltage rating of 1200V, and an on-resistance of 35.6 mΩ. It is often used in applications that require fast and efficient power switching, making it a popular choice for automotive and traction applications, as well as for other industrial applications. Due to its high load current and low on-resistance, it is also capable of making fast switching, even with relatively low voltage levels. This makes it an important transistor in many applications today.

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