Allicdata Part #: | FGA25S125P-ND |
Manufacturer Part#: |
FGA25S125P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1250V 50A 250W TO-3PN |
More Detail: | IGBT Trench Field Stop 1250V 50A 250W Through Hole... |
DataSheet: | FGA25S125P Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1250V |
Current - Collector (Ic) (Max): | 50A |
Current - Collector Pulsed (Icm): | 75A |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 25A |
Power - Max: | 250W |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 204nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Power Transistor Devices – FGA25S125P
Power transistor devices are used in power electronics applications and electrical systems to control power to other devices, circuits, and components. One of the popular devices of this type is the FGA25S125P, which is part of a family of power transistors with different sizes and ratings. It belongs to the transistors type - IGBTs - single, and it is usually used in applications where high power switching and high voltage tolerance are needed.
FGA25S125P Application Field and Working Principle
The FGA25S125P is usefully employed in direct current (DC) applications, such as solar inverters, motor drives and motor control, battery charging systems, and uninterruptible power supplies (UPS). This device is suitable for switching high voltages and currents up to 600V and 25A respectively, and is also very effective in switching low voltages and power levels.
It is a fast-acting high current IGBT that provides excellent low switching characteristics. This device’s main circuit element is a MOSFET, with a built-in diode between the drain and source which acts as a synchronous rectifier. It operates in a reverse recovery type, offering superior characteristics on both the forward and reverse recovery stages. The FGA25S125P also features low gate charge, low gate-to-drain capacitance, and improved immunity to surge currents through increased capacitance samples.
At the core of this device is an insulated gate bipolar transistor or IGBT. Instead of using two MOSFETs as in the FGA25S125P, this transistor uses an N-channel and P-channel MOSFET in series with an Emitter-Base junction of a bipolar energy device. This combination of devices works together to ensure high-density voltage blocking, low switching losses, and fast switching speed.
The working principle of this transistor is fairly simple. During the OFF state, the voltage applied on the gate is equal to the voltage of the voltage source, thus allowing the MOSFET to block any current flow. During the ON state, when the gate voltage is lowered with respect to the voltage source, the transistor is opened, allowing the current to pass. When the power is shut off, the current automatically turns OFF. This is made possible through the reverse current blocking capability of the IGBT.
The FGA25S125P is an ideal transistor for applications that require high power switching, fast switching, and high voltage tolerance. It is a reliable, cost-effective device with superior switching characteristics and is suitable for a wide range of direct current applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FGA20N120FTDTU | ON Semicondu... | 3.09 $ | 2135 | IGBT 1200V 40A 298W TO3PN... |
FGA25S125P-SN00337 | ON Semicondu... | 2.93 $ | 163 | IGBT 1250V 50A 250W TO-3P... |
FGA25N120ANDTU | ON Semicondu... | 0.0 $ | 1000 | IGBT 1200V 40A 310W TO3PI... |
FGA25N120ANTU | ON Semicondu... | 0.0 $ | 1000 | IGBT 1200V 40A 310W TO3PI... |
FGA25N120FTD | ON Semicondu... | -- | 1000 | IGBT 1200V 50A 313W TO3PI... |
FGA25N120ANTDTU-F109 | ON Semicondu... | -- | 1000 | IGBT 1200V 50A 312W TO3PI... |
FGA20S140P | ON Semicondu... | -- | 428 | IGBT 1400V 40A 272W TO-3P... |
FGA20S125P-SN00336 | ON Semicondu... | 1.94 $ | 240 | IGBT 1250V 20A 250W TO-3P... |
FGA25N120ANTDTU | ON Semicondu... | -- | 1000 | IGBT 1200V 50A 312W TO3PI... |
FGA20S125P | ON Semicondu... | -- | 1000 | IGBT 1250V 40A 250W TO-3P... |
FGA25S125P | ON Semicondu... | -- | 1000 | IGBT 1250V 50A 250W TO-3P... |
FGA20S120M | ON Semicondu... | -- | 1000 | IGBT 1200V 40A 348W TO3PN... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT