FGA25N120ANDTU Discrete Semiconductor Products |
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Allicdata Part #: | FGA25N120ANDTU-ND |
Manufacturer Part#: |
FGA25N120ANDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 40A 310W TO3P |
More Detail: | IGBT NPT 1200V 40A 310W Through Hole TO-3P |
DataSheet: | FGA25N120ANDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | 4.8mJ (on), 1mJ (off) |
Base Part Number: | FGA25N120A |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 350ns |
Test Condition: | 600V, 25A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 60ns/170ns |
Gate Charge: | 200nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 310W |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 25A |
Current - Collector Pulsed (Icm): | 75A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The FGA25N120ANDTU is an IGBT (Insulated Gate Bipolar Transistor) that belongs to the single type of IGBTs. IGBTs are used in many applications due to their features of high switching speed and high efficiency, and they are especially useful when it comes to power conversion.
FGA25N120ANDTU has a range of uses in many applications, including motor control, switching power supplies, AC/DC power conversion, and power factor correction circuits. The FGA25N120ANDTU can be used to control power output in a wide range of applications. It is also suitable for use in automotive applications, where it is capable of handling high current and providing fast switching speeds.
FGA25N120ANDTU uses a single gate structure, which makes it easier to control. It is also very efficient in terms of power loss due to the fact that it has a very low on-resistance. This makes it useful for applications where power efficiency is a priority. Additionally, it can handle high switching frequencies, which makes it ideal for fast-switching applications.
The working principle of the FGA25N120ANDTU is based on the principle of bipolar transistor action. It is comprised of two P-type and N-type materials, which are connected to each other by an insulating layer. When a voltage is applied across the transistor, it creates an electric field across the layers, which creates a charge at the gate. When the gate receives positive current, the current flows through it, causing the P and N materials to conduct and becoming “on”. In this state, the FGA25N120ANDTU is capable of controlling the output power.
The FGA25N120ANDTU is a single-type IGBT and it is suitable for a variety of applications due to its high switching speeds and low power losses. Its single gate structure makes it easy to control and the relatively low on-resistance enables it to be used for efficient power conversion. Additionally, the FGA25N120ANDTU is capable of handling high current, which makes it suitable for use in automotive applications. Overall, the FGA25N120ANDTU is a useful and reliable IGBT for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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