Allicdata Part #: | FGA30N120FTDTU-ND |
Manufacturer Part#: |
FGA30N120FTDTU |
Price: | $ 4.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 60A 339W TO3P |
More Detail: | IGBT Trench Field Stop 1200V 60A 339W Through Hole... |
DataSheet: | FGA30N120FTDTU Datasheet/PDF |
Quantity: | 112 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.20840 |
10 +: | $ 3.77874 |
100 +: | $ 3.09582 |
500 +: | $ 2.63542 |
1000 +: | $ 2.22264 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 60A |
Current - Collector Pulsed (Icm): | 90A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Power - Max: | 339W |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 208nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Reverse Recovery Time (trr): | 730ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
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Field Effect Transistors (FETs) are a type of transistor which uses voltage to control the current rather than the current controlling the voltage. FETs are commonly used in integrated circuits, due to their ease of fabrication and high frequency operation. FGA30N120FTDTU is a type of FET known as an "Insulated Gate Bipolar Transistor" (IGBT). These transistors are used in applications such as motor control, power switching, and power supply design.
The FGA30N120FTDTU IGBT is a single short-circuit protected IGBT. The device combines the benefits of a fast-switching IGBT with the short-circuit behavior of a bipolar transistor. This provides improved short-circuit protection and increased safety in power applications. It also has built-in temperature sensing and protection circuits. The device has an efficiency of up to 98%, making it very efficient at converting power. The FET has a maximum voltage rating of 1200V, which makes it suitable for many applications.
The working principle of the FGA30N120FTDTU transistor is based on the typical gate-controlled electrical field. This field is created by the gate voltage and is used to control the flow of current through the IGBT. The field created by the gate voltage causes the current to turn on and off by affecting the conductivity between the source and the drain. When the current reaches a certain level, the gate will turn off, stopping the current from flowing. The gate voltage is used to control the current, making the FET very efficient at converting power. The short-circuit protection of the IGBT ensures that it will not be damaged if it is over-loaded.
The FGA30N120FTDTU IGBT is used in a variety of applications, including motor controls, power switching, and power supply design. It can be used in inverters, switch mode power supplies, switches, and motor controls. The device is also used in traction drives, uninterruptible power supplies, and solar inverters. Due to its short-circuit protection and high efficiency, the FET can also be used in other applications such as lighting and AC line rectification.
The FGA30N120FTDTU IGBT is a versatile device that can be used in many different applications. Its high efficiency, short-circuit protection, and temperature sensing make it a perfect choice for applications which require fast switching and reliable power conversion. The FET can also be used in a variety of applications, ranging from motor controls to power supplies. Its various features make it an ideal choice for most applications.
The specific data is subject to PDF, and the above content is for reference
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