Allicdata Part #: | FGA30N65SMD-ND |
Manufacturer Part#: |
FGA30N65SMD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 60A 300W TO3P-3 |
More Detail: | IGBT Field Stop 650V 60A 300W Through Hole TO-3P |
DataSheet: | FGA30N65SMD Datasheet/PDF |
Quantity: | 308 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 60A |
Current - Collector Pulsed (Icm): | 90A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 30A |
Power - Max: | 300W |
Switching Energy: | 716µJ (on), 208µJ (off) |
Input Type: | Standard |
Gate Charge: | 87nC |
Td (on/off) @ 25°C: | 14ns/102ns |
Test Condition: | 400V, 30A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 35ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
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Introduction
FGA30N65SMD is an IGBT package type of Agilent Technologies. Originally, it was an Insulated Gate Bipolar Transistor, or IGBT. This type of transistor is a highly integrated, medium-power electronic device which is basically a combination of many different devices. It consists of two main components, a bipolar transistor and a gate insulator.
Application Field
The FGA30N65SMD is used in many applications, particularly in high-power electronic converters, such as switching power supplies, DC-DC converters, variable speed drives, and motor drives. With its high efficiency and low losses, it can provide exceptional performance to these applications. In addition, it is also well suited for use in solar and power electronics, as well as in industrial, consumer, automotive, and aerospace applications. Additionally, its flexibility and versatile characteristics make it suitable for different packages and power management applications.
Working Principle
When a voltage is applied to the gate insulator, it provides an electric barrier between the base and collector regions. Since the voltage applied to the gate insulator is greater than the voltage applied to the base, current flows through the collector in opposite direction, creating a reverse-biased condition. This allows the FGA30N65SMD to be used as a switch, with current flowing through the collector only when the gate voltage is greater than the base voltage.
The IGBT\'s main advantage is due to its ability to control the voltage drop across the collector-emitter junction. As current flows through the collector, there will be some voltage drop. Furthermore, when the collector-emitter voltage is above the breakover voltage, the transistor will conduct at a higher voltage, nearly equal to the gate voltage. This behavior makes it ideal for use as a switch and is the basis for its uses in electronics converters.
Conclusion
The FGA30N65SMD is a medium-power IGBT package type from Agilent Technologies which is used in many different applications. Its flexibility and versatile characteristics make it suitable for different packages, as well as for applications such as switching power supplies, DC-DC converters, variable speed drives, and motor drives. It is also well suited for use in solar and power electronics, as well as in industrial, consumer, automotive, and aerospace applications. Its main advantage lies in its ability to control the voltage drop across the collector-emitter junction, with current flowing through the collector only when the gate voltage is greater than the base voltage.
The specific data is subject to PDF, and the above content is for reference
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