Allicdata Part #: | FGA30T65SHD-ND |
Manufacturer Part#: |
FGA30T65SHD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 60A 238W TO-3PN |
More Detail: | IGBT Trench Field Stop 650V 60A 238W Through Hole ... |
DataSheet: | FGA30T65SHD Datasheet/PDF |
Quantity: | 395 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 60A |
Current - Collector Pulsed (Icm): | 90A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 30A |
Power - Max: | 238W |
Switching Energy: | 598µJ (on), 167µJ (off) |
Input Type: | Standard |
Gate Charge: | 54.7nC |
Td (on/off) @ 25°C: | 14.4ns/52.8ns |
Test Condition: | 400V, 30A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 31.8ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
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The FGA30T65SHD is an insulated-gate bipolar transistor (IGBT) module produced by ON Semiconductor. It is part of ON Semiconductor’s NexFET family of power switches and is an excellent choice for high- and low-power applications. This transistor module provides excellent performance in terms of speed, current handling capability and temperature stability. It also offers built-in protection features against short and over-temperature conditions for improved system reliability.
The FGA30T65SHD is specifically designed to be used in applications that require efficient and accurate current conduction. This transistor module provides a wide range of current levels, allowing it to be used in both low-power and high-power applications. The high operating temperature range of the FGA30T65SHD also makes it suitable for applications that require temperature stability and long life. The device is rated for a maximum junction temperature of 175°C, allowing it to operate safely and reliably in harsh environmental conditions.
The FGA30T65SHD is a single-phase transistor module. This allows it to be used in multiple phase applications, such as motor control, power conversion and lighting control. Its relatively low gate charge and fast switching time make it ideal for many applications. Its low voltage drop and scalable current capabilities ensure that the device remains safe and efficient during operation.
The working principle of the FGA30T65SHD is to control the flow of electrical current via the manipulation of the voltage and current characteristics of the device by an external control signal. When an external control signal is applied to the gate of the transistor, the amount of current that is allowed to flow through the device is changed. This transistor module contains two MOSFETs, which can be used to control the on and off states of the circuit. When the gate of one of the MOSFETs is negative, it will be turned to the off state, preventing current from flowing through the device. When the gate of the other MOSFET is positive, it will be in the on state, allowing current to flow.
The FGA30T65SHD is an excellent choice for numerous high- and low-power applications thanks to its excellent performance, scalability and wide temperature range. Its single-phase design also makes it well-suited for multiple phase applications where high reliability, accuracy and speed are required. With its wide range of features and functionalities, the FGA30T65SHD is sure to be an invaluable asset in any system.
The specific data is subject to PDF, and the above content is for reference
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