| Allicdata Part #: | FGA4060ADF-ND |
| Manufacturer Part#: |
FGA4060ADF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 80A 238W TO-3PN |
| More Detail: | IGBT Trench Field Stop 600V 80A 238W Through Hole ... |
| DataSheet: |  FGA4060ADF Datasheet/PDF |
| Quantity: | 439 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 80A |
| Current - Collector Pulsed (Icm): | 120A |
| Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 40A |
| Power - Max: | 238W |
| Switching Energy: | 1.37mJ (on), 250µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 55.5nC |
| Td (on/off) @ 25°C: | 16.8ns/54.4ns |
| Test Condition: | 400V, 40A, 6 Ohm, 15V |
| Reverse Recovery Time (trr): | 26ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
Description
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FGA4060ADF is a kind of high current IGBT transistor with a single chip housed in a TO-220 package. As an IGBT, FGA4060ADF has the advantages of both bipolar transistors (BJT) and field-effect transistors (FETs). The common application field of FGA4060ADF includes motor control, AC/DC converters and power supplies. In these applications, fast switching speed and low loss are important to reduce the overall system cost.Working principleIn order to have a better understanding of FGA4060ADF\'s working principle, let\'s look into its construction and operating region. It is composed of three parts: two normal bipolar transistors and a power FET. When FGA4060ADF is in the on-state, the base of the inner diode is connected to the collector, thus providing the current path through the diode. When FGA4060ADF is in the off-state, the base of the inner diode disconnects from the collector, thus the current path is cut off.In the on-state, FGA4060ADF can conduct high current and has low electrical turn-off time. In the off-state, the device can provide a high output resistance and a higher input resistance. It can also provide improved power handling capability.In terms of its operating region, FGA4060ADF can operate over a wide range of gate and collector voltages. The maximum gate voltage is 20V, and the maximum collector voltage is 600V. Furthermore, the maximum junction temperature is 175°C.ConclusionFGA4060ADF is a high current IGBT transistor with a TO-220 package. Its application field includes motor control, AC/DC converters and power supplies. The working principle of FGA4060ADF is based on two normal bipolar transistors and a power FET. It can operate over a wide range of gate and collector voltages.
The specific data is subject to PDF, and the above content is for reference
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