FGA40N60UFDTU Discrete Semiconductor Products |
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Allicdata Part #: | FGA40N60UFDTU-ND |
Manufacturer Part#: |
FGA40N60UFDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 40A 160W TO3P |
More Detail: | IGBT 600V 40A 160W Through Hole TO-3PN |
DataSheet: | FGA40N60UFDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 160W |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 95ns |
Test Condition: | 300V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/65ns |
Gate Charge: | 77nC |
Input Type: | Standard |
Switching Energy: | 470µJ (on), 130µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 160A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An insulated-gate bipolar transistor (IGBT) is a type of transistor that combines the high voltage and power handling of the bipolar transistor and the switching speed, low power dissipation, and modern control advantages of the field-effect transistor (FET). FGA40N60UFDTU is a fast switching field stop IGBT manufactured by Fairchild Semiconductor. This IGBT is suited for applications such as AC and DC drives, welding and power supplies.
IGBT Basics
An IGBT typically has two power terminals, the emitter and the collector, as it is a three-terminal electronic device. The other terminal, the gate is used to control the current flow between the emitter and the collector. When a voltage is applied to the gate, the current between the emitter and the collector increases, and when the voltage is removed, the current ceases to flow.
FGA40N60UFDTU Application Field and Working Principle
FGA40N60UFDTU IGBT has a maximum voltage rating of 600V and a maximum current rating of 40A. It is suitable for applications that require high speed, accurate control and low current consumption, such as AC and DC drives, welding and power supplies.
FGA40N60UFDTU IGBT works by controlling the current flow between the emitter and the collector using a voltage applied to the gate. When a positive voltage is applied to the gate, a conducting channel is created between the emitter and collector, allowing a current to flow through. When the voltage is removed, the conducting channel is broken and the current ceases to flow. This allows for precise control of the flow of power to the load.
FGA40N60UFDTU IGBT also features its fast switching speed. Because the gate voltage is applied to control the current flow, the switching speed of the IGBT is much faster than that of its bipolar cousin. Therefore, FGA40N60UFDTU IGBTs can be used to control high speed switching applications.
The fast switching speeds and low power dissipation of the FGA40N60UFDTU IGBTs make them an ideal choice for applications that require precise control, high speed switching and low power dissipation. They are commonly used in AC and DC drives, welding, power supplies and other applications that require fast, accurate and low power control.
The specific data is subject to PDF, and the above content is for reference
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