FGA40T65UQDF Discrete Semiconductor Products |
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Allicdata Part #: | FGA40T65UQDF-ND |
Manufacturer Part#: |
FGA40T65UQDF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 80A 231W TO3PN |
More Detail: | IGBT NPT 650V 80A 231W Through Hole TO-3PN |
DataSheet: | FGA40T65UQDF Datasheet/PDF |
Quantity: | 170 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 1.67V @ 15V, 40A |
Power - Max: | 231W |
Switching Energy: | 989µJ (on), 310µJ (off) |
Input Type: | Standard |
Gate Charge: | 306nC |
Td (on/off) @ 25°C: | 32ns/271ns |
Test Condition: | 400V, 40A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 89ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
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The FGA40T65UQDF is a Wide-Band-Gap (WBG) insulated gate bipolar transistor (IGBT) in low-frequency, single-switch applications. This device provides increased power efficiency and device reliability. It has a low on-state voltage drop and minimal thermal transient. FGA40T65UQDF is especially suitable for hard-switched applications and is available in a standard 650 V (VCE(sat) 60 V) package.
Application Field of FGA40T65UQDF
FGA40T65UQDF is widely used in applications such as motor control, industrial, automotive and HVAC. Thanks to its fast switching speed, low on-state voltage, and small thermal transient, it is suitable for high-power applications with hard-switched on/off operations. It is also ideal for motor and solar power generation applications, power supplies, and power conversion, such as servo motor drives, AC/DC and DC/DC, uninterruptible power supplies and UPS. Moreover, it can be used in applications like welding in an automotive/solar environment.
Working Principle of FGA40T65UQDF
FGA40T65UQDF is a WBG IGBT and utilizes the latest 6th generation of IGBT technology. The device consists of two insulated gate field-effect transistors isolated with high-quality silicon-oxide films. The IGBT has a P+ freewheeling diode connected in parallel to the low-side IGBT, which reduces losses from higher frequency reverse recovery. The device features a fast switching time, low on-state voltage drop, and minimized thermal transient. When a source of current flows through the gate-emitter of the IGBT, it controls the flow of current from the collector to the emitter and helps to regulate the energy output of the device. This allows it to be used for a range of applications, from hard-switched on/off operations to more intricate power supplies.
Overall, FGA40T65UQDF can be used in a variety of applications thanks to its fast switching speed, low on-state voltage, and small thermal transient. This makes it a versatile and reliable device for motor control, industrial, automotive, HVAC, and solar power generation applications. Its 6th generation IGBT technology ensures greater efficiency and power capabilities, making it one of the most reliable WBG IGBTs on the market.
The specific data is subject to PDF, and the above content is for reference
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