FGA60N65SMD

Power - Max:	600W
Supplier Device Package:	TO-3PN
Package / Case:	TO-3P-3, SC-65-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	47ns
Test Condition:	400V, 60A, 3 Ohm, 15V
Td (on/off) @ 25°C:	18ns/104ns
Gate Charge:	189nC
Input Type:	Standard
Switching Energy:	1.54mJ (on), 450µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 60A
Current - Collector Pulsed (Icm):	180A
Current - Collector (Ic) (Max):	120A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to FGA60N65SMD

The FGA60N65SMD is a popular IGBT, or Insulated Gate Bipolar Transistor, which is widely used for high power switching applications. This specific IGBT is manufactured and supplied by onsemi, one of the largest distributors of semiconductors in the world. The FGA60N65SMD is an advanced IGBT that consists of a Field stop IGBT, which is a newer technology than standard IGBTs, and a ultra-fast soft recovery diode. This combination of technologies allows it to offer the user improved efficiency and performance when compared to more traditional IGBT designs.

FGA60N65SMD Application Fields

The FGA60N65SMD is a general-purpose IGBT and can be used in a variety of applications. Due to its high-power switching, it is generally used in power systems such as large motors and power converters. It is also suitable for use in solar power applications, renewable energy systems and inverter systems. Additionally, it can be used in motor drives and high-power motor controllers.

FGA60N65SMD Working Principle

The FGA60N65SMD is a Field Stop IGBT, which is a new design of IGBTs which offers improved efficiency and performance. The IGBT works by using a voltage insulation layer in the form of a gate oxide layer to control the flow of current between two terminals. This layer allows the user to control the current passing through the IGBT using a small control signal, enabling switching speeds that are much faster than those of more traditional IGBTs.When the FGA60N65SMD is in the OFF state, the gate oxide layer is in its most stable state and does not allow current to flow. When the control signal is applied to the gate of the IGBT, it allows a small current to pass through the gate oxide layer and provides a path for large current to flow between the two terminals. This enables the user to switch the device on or off rapidly and with a high degree of accuracy.

Conclusion

The FGA60N65SMD IGBT is a popular IGBT used in a variety of applications for high-power switching. It offers improved efficiency and performance when compared to more traditional IGBT designs and is suitable for use in solar power applications, renewable energy systems, inverter systems and motor drives. The working principle of the FGA60N65SMD is based on a Field Stop IGBT design and uses a voltage insulation layer in the form of a gate oxide layer to control the flow of current between two terminals.

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