Allicdata Part #: | FGA6560WDF-ND |
Manufacturer Part#: |
FGA6560WDF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 120A 306W TO-3PN |
More Detail: | IGBT Trench Field Stop 650V 120A 306W Through Hole... |
DataSheet: | FGA6560WDF Datasheet/PDF |
Quantity: | 425 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 120A |
Current - Collector Pulsed (Icm): | 180A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 60A |
Power - Max: | 306W |
Switching Energy: | 2.46mJ (on), 520µJ (off) |
Input Type: | Standard |
Gate Charge: | 84nC |
Td (on/off) @ 25°C: | 25.6ns/71ns |
Test Condition: | 400V, 60A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 110ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Description
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<div><h3><b>FGA6560WDF Application Field and Working Principle</b></h3><p>The FGA6560WDF is a IGBT Transistor made by Fairchild Semiconductor specifically designed for applications that require high switching speed, high efficiency and high reliability. It is highly suitable for use in DC-AC inverters, AC motor drives, UPS systems and low frequency lighting systems. It is often used in electrical appliances, consumer electronics, industrial and automotive applications.</p> <p>An IGBT stands for Insulated Gate Bipolar Transistor and is a type of transistor commonly used as switching devices. The FGA6560WDF transistor is a single IGBT, meaning that it is composed of one PN junction layer and thus has only two pin terminals. Its Structure is comprised of N-type semiconductor and P-type semiconductor layer that has been isolated from each other by an insulating layer.</p><p>The FGA6560WDF working principle works by using a voltage that is applied to the third gate terminal, to control the current flow between the collector and emitter terminals. When a voltage is applied to the gate terminal, the transistor is able to switch from the OFF state to the ON state, allowing current to flow from the collector to the emitter. On the other hand when the voltage applied to the gate terminal is removed, the transistor assumes its OFF state, which reduces or blocks current flow from the collector to the emitter.</p><p>Due to its high breaking capacity, fast switching speeds and superior thermal management capabilities, this type of transistor is frequently used in high power applications such as motors, high frequency lighting systems, UPS systems, and DC-AC inverters.</p> <p>The FGA6560WDF also has an over temperature protection mechanism that allows the transistor to shut itself off if the temperature of the component exceeds a certain limit. This helps to prevent the system from permanent damage and can be used as a safety precaution for some applications.</p><p>In summary, the FGA6560WDF is a single IGBT transistor designed for applications requiring high switching speeds and high efficiency. It is able to control the current flow between the collector and emitter terminals by using voltage applied to the third gate terminal and can handle over temperature protection. This transistor is perfect for use in electrical appliances, consumer electronics, industrial and automotive applications due to its faster response time and improved thermal management abilities.</p></div>
The specific data is subject to PDF, and the above content is for reference
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