FGA6540WDF Allicdata Electronics
Allicdata Part #:

FGA6540WDF-ND

Manufacturer Part#:

FGA6540WDF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 650V 80A 238W TO-3PN
More Detail: IGBT Trench Field Stop 650V 80A 238W Through Hole ...
DataSheet: FGA6540WDF datasheetFGA6540WDF Datasheet/PDF
Quantity: 449
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 449Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 238W
Switching Energy: 1.37mJ (on), 250µJ (off)
Input Type: Standard
Gate Charge: 55.5nC
Td (on/off) @ 25°C: 16.8ns/54.4ns
Test Condition: 400V, 40A, 6 Ohm, 15V
Reverse Recovery Time (trr): 101ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Description

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The FGA6540WDF is a single IGBT transistor that is used in various applications across a wide range of industries. IGBTs, or insulated-gate bipolar transistors, are power devices that act as a switch in an electrical circuit, allowing current to flow between two points. IGBTs are used as an alternative to traditional power switch devices, such as BJTs, as they offer various advantages such as higher efficiency and lower power losses. IGBTs can switch faster and can also handle higher voltage levels. This makes them ideal for applications where high current and/or voltage levels are present.

The FGA6540WDF is a 1200V/30A IGBT transistor. It is composed of a single chip and is designed for a wide range of applications. It can be used in systems where both high and low-voltage switching is required, including in power supplies, motor drives, drive control, and other industrial control systems. In addition, the FGA6540WDF is also suitable for renewable energy use, particularly in solar panel applications.

The FGA6540WDF has several features that make it suitable for various applications. It has a low on-state voltage drop (Vcesat) of 1.5V and ultra-low gate charge (Qgs) of only 3.2 nC. It also has an excellent thermal resistivity of 0.75 K/W, making it highly efficient for applications where heat dissipation is critical. Furthermore, the device has a wide operating temperature range of -55 to +150 °C, making it suitable for a range of even extreme environments.

The main working principle of the FGA6560WDF is based on the bipolar junction transistor (BJT) technology. It works by using two transistors—an N-type and a P-type—which control a voltage-controlling current across the collector-emitter circuit when a voltage is applied to the base. This creates a larger current which can be used to switch other components in the circuit. This is achieved by the FGA6540WDF by using a gate driver and an insulated gate. When a voltage is applied to the gate, it switches the device to the on-state and thereby allowing current to flow through the collector-emitter circuit.

The FGA6540WDF is designed to be used in a wide range of industries and applications. Its low on-state voltage drop, low gate charge, high thermal resistivity, and wide operating temperature range makes it suitable for many types of power switching applications, particularly in Solar Panel and power supply systems. Its convenience and efficient performance also make it an ideal choice for automotive, industrial control, and renewable energy systems.

The specific data is subject to PDF, and the above content is for reference

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