Allicdata Part #: | FGA6540WDF-ND |
Manufacturer Part#: |
FGA6540WDF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 80A 238W TO-3PN |
More Detail: | IGBT Trench Field Stop 650V 80A 238W Through Hole ... |
DataSheet: | FGA6540WDF Datasheet/PDF |
Quantity: | 449 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 40A |
Power - Max: | 238W |
Switching Energy: | 1.37mJ (on), 250µJ (off) |
Input Type: | Standard |
Gate Charge: | 55.5nC |
Td (on/off) @ 25°C: | 16.8ns/54.4ns |
Test Condition: | 400V, 40A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 101ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FGA6540WDF is a single IGBT transistor that is used in various applications across a wide range of industries. IGBTs, or insulated-gate bipolar transistors, are power devices that act as a switch in an electrical circuit, allowing current to flow between two points. IGBTs are used as an alternative to traditional power switch devices, such as BJTs, as they offer various advantages such as higher efficiency and lower power losses. IGBTs can switch faster and can also handle higher voltage levels. This makes them ideal for applications where high current and/or voltage levels are present.
The FGA6540WDF is a 1200V/30A IGBT transistor. It is composed of a single chip and is designed for a wide range of applications. It can be used in systems where both high and low-voltage switching is required, including in power supplies, motor drives, drive control, and other industrial control systems. In addition, the FGA6540WDF is also suitable for renewable energy use, particularly in solar panel applications.
The FGA6540WDF has several features that make it suitable for various applications. It has a low on-state voltage drop (Vcesat) of 1.5V and ultra-low gate charge (Qgs) of only 3.2 nC. It also has an excellent thermal resistivity of 0.75 K/W, making it highly efficient for applications where heat dissipation is critical. Furthermore, the device has a wide operating temperature range of -55 to +150 °C, making it suitable for a range of even extreme environments.
The main working principle of the FGA6560WDF is based on the bipolar junction transistor (BJT) technology. It works by using two transistors—an N-type and a P-type—which control a voltage-controlling current across the collector-emitter circuit when a voltage is applied to the base. This creates a larger current which can be used to switch other components in the circuit. This is achieved by the FGA6540WDF by using a gate driver and an insulated gate. When a voltage is applied to the gate, it switches the device to the on-state and thereby allowing current to flow through the collector-emitter circuit.
The FGA6540WDF is designed to be used in a wide range of industries and applications. Its low on-state voltage drop, low gate charge, high thermal resistivity, and wide operating temperature range makes it suitable for many types of power switching applications, particularly in Solar Panel and power supply systems. Its convenience and efficient performance also make it an ideal choice for automotive, industrial control, and renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FGA60N60UFDTU | ON Semicondu... | -- | 1000 | IGBT 600V 120A 298W TO3PI... |
FGA6530WDF | ON Semicondu... | 2.33 $ | 448 | IGBT 650V 60A 176W TO3PNI... |
FGA6540WDF | ON Semicondu... | -- | 449 | IGBT 650V 80A 238W TO-3PN... |
FGA6560WDF | ON Semicondu... | -- | 425 | IGBT 650V 120A 306W TO-3P... |
FGA6065ADF | ON Semicondu... | -- | 423 | IGBT 650V 120A 306W TO3PI... |
FGA60N65SMD | ON Semicondu... | -- | 1000 | IGBT 650V 120A 600W TO3PI... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT