FGA90N30TU Discrete Semiconductor Products |
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Allicdata Part #: | FGA90N30TU-ND |
Manufacturer Part#: |
FGA90N30TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 300V 90A 219W TO3P |
More Detail: | IGBT 300V 90A 219W Through Hole TO-3P |
DataSheet: | FGA90N30TU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 219W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 87nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.4V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 220A |
Current - Collector (Ic) (Max): | 90A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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FGA90N30TU Application Field and Working Principle
FGA90N30TU is a type of Insulated Gate Bipolar Transistor (IGBT) and part of the FGA90N30TU family, from the German company Infineon Technologies. It is a single device, primarily used in industrial and commercial applications. FGA90N30TU is a high voltage and high power semiconductor, with a Matched Gate Turn-Off-Thyristor (GTO) structure, suitable for high frequency and high current applications.
Features of FGA90N30TU Devices
- Rated voltage of 600V
- 1200V surge voltage
- Advanced Planar MOS technology
- Gate driver circuit
- Low noise performance
- High speed switching
Applications of FGA90N30TU Devices
FGA90N30TU is a perfect choice for applications requiring high switching speed, high performance and high reliability. The device can be mainly used in applications such as motor starters, computer power supplies, thermoelectric generators, UPS systems, automotive high-power electronic systems, locomotive traction control systems, electric vehicle drive systems and other high frequency power current switching applications.
Working Principle of FGA90N30TU Devices
FGA90N30TU consists of two main parts, a gate turn-off thyristor (GTO) and an insulated gate bipolar transistor (IGBT). The GTO structure is used to switch large currents with a low on-state resistance, while the IGBT structure is used to provide fast switching speed at high voltages. It also has an integrated gate driver circuit, which is used to control the switching speed of the device.
The FGA90N30TU works by using a gate signal to turn the voltage on and off, which in turn turns the GTO and IGBT structures on and off. The GTO part acts as a switch, allowing the large current to pass through when turned on and blocking the current when turned off. The IGBT part provides a fast switching speed when triggered.
The FGA90N30TU device is designed to withstand high current and voltage, making it suitable for high frequency applications. Additionally, due to its low noise performance, it is an ideal choice for noisy applications. As such, it is a popular choice for various industrial and commercial applications.
Conclusion
The FGA90N30TU is a highly reliable IGBT device from Infineon Technologies, suitable for industrial and commercial applications. It is a single device, consisting of a gate turn-off thyristor (GTO) and an insulated gate bipolar transistor (IGBT), with a gate driver circuit for controlling switching speed. It is rated for 600V, with a 1200V surge voltage and can handle high current and high frequency applications, due to its low noise performance. As such, it is an ideal device for various applications such as motor starters, computer power supplies and electric vehicle drive systems.
The specific data is subject to PDF, and the above content is for reference
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