FGA90N33ATTU Discrete Semiconductor Products |
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Allicdata Part #: | FGA90N33ATTU-ND |
Manufacturer Part#: |
FGA90N33ATTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 330V 90A 223W TO3P |
More Detail: | IGBT Trench 330V 90A 223W Through Hole TO-3P |
DataSheet: | FGA90N33ATTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 223W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 95nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.4V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 330A |
Current - Collector (Ic) (Max): | 90A |
Voltage - Collector Emitter Breakdown (Max): | 330V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FGA90N33ATTU is a type of IGBT (Insulated Gate Bipolar Transistor) which uses a single transistor as its main component. This type of transistor is widely used in electrical engineering and power electronics. It offers a low on-state voltage drop, high frequency operation, low switching losses, and fast turn-on and turn-off capabilities.The FGA90N33ATTU belongs to the group of single IGBTs, which are the most commonly used type of IGBT. These transistors consist of two main components: an emitter, which is an N-type semiconductor, and a collector, which is a P-type semiconductor. The emitter and the collector are forward-biased, which means they have the same polarity and attract each other, allowing the current to flow from the emitter to the collector.The FGA90N33ATTU application field mostly relates to the power electronics industry, since it requires the use of high-current, high-power transistors. It is used for high-power applications such as electric vehicle motors and inverters, high-frequency oscillators, power supplies, and power converters. It is also used in industrial automation and robotics.The working principle of the FGA90N33ATTU relies on a process called “switching”. In this process, a voltage is applied across the two terminals of the transistor, which causes the current to flow from the emitter side to the collector side. When the voltage is increased, more current is generated, and when the voltage is decreased, the current decreases. The FGA90N33ATTU also has a protection mechanism that prevents the current from exceeding a certain level.In order to use the FGA90N33ATTU, the user needs to understand several parameters, such as the breakdown voltage, gate-emitter voltage, on-state voltage drop, gate current, and gate-emitter turn-off time. These parameters are important for selecting the right type of transistor for a particular application. The user should also pay attention to the operating temperature range of the transistor, since an increase in temperature may lead to an conductivity increase, which can damage the transistor.Overall, the FGA90N33ATTU is a highly reliable and efficient single IGBT which offers a wide range of applications in the power electronics industry. With its low on-state voltage drop, high frequency operation, low switching losses, and fast turn-on and turn-off capabilities, this type of transistor is perfect for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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