FGA90N33ATDTU Discrete Semiconductor Products

The FGA90N33ATDTU transistor is a single (non-composite) Insulated Gate Bipolar Transistor, or IGBT, and is used in a wide range of devices, from professional audio and video equipment to military and industrial applications. This type of transistor, is designed to be relatively efficient and robust, allowing for wide voltages and switching speeds with little power draw. By understanding the application field and working principle of the FGA90N33ATDTU, you can choose the right device for your application.

Application Field

The FGA90N33ATDTU is used in all sorts of applications, from powering and controlling motors in hi-fi sound systems, to high-end optics, telecommunications, industrial motors and military equipment. It is also commonly used in Motor Control applications, where it is used to control the speed and torque of a motor. An example of this type of application is in an electric vehicle or hybrid vehicle, where the FGA90N33ATDTU regulates the power going to the individual motor by switching off current paths using the IGBT\'s low power draw. In Audio-Video applications, the FGA90N33ATDTU is used to power and control amplifiers and other audio-video components. It does this by providing a low-loss, low-noise, high-speed device for switching and controlling voltage. The low noise is important for audio and video applications, as high levels of disturbance can affect the quality of the signal.The FGA90N33ATDTU can also be used in industrial applications, such as Robotics and Automation. The IGBT in this device aids in providing a low-loss, high-speed solution for these applications, allowing them to move components at a faster rate with less power draw.Finally, the FGA90N33ATDTU is often the device of choice for military applications, such as missile systems, radar, avionics and guidance systems. The IGBT in this device allows for rapid switching, whilst still being able to withstand the wide voltages required in these applications.

Working Principle

The FGA90N33ATDTU works on the principle of a MOSFET ( Metal Oxide Semiconductor Field Effect Transistor ), which is controlled by a voltage or current change. When a voltage is applied to the control gates, the transistor is enabled, allowing current to flow between the collector and emitter. When the voltage is removed from the control gates, the transistor is disabled, thus ceasing current flow.The FGA90N33ATDTU uses an Insulated Gate Bipolar Transistor, or IGBT, which is a combination of a MOSFET and bipolar transistor. The IGBT is controlled by an insulated gate, which uses an electric field in order to control the voltage and current flow between the collector and emitter. This allows for high-voltage switching at low currents, with little noise or power draw.The FGA90N33ATDTU can switch voltages up to 900 volts and 10 amps, with switching speeds up to 1kHz. It has low noise, with a THD( Total Harmonic Distortion ) of 0.35%.

Conclusion

The FGA90N33ATDTU is a single IGBT transistor, which is used in a wide range of applications, from audio-video to military applications. It works on the principle of a MOSFET, which is controlled by a voltage or current change, combined with an IGBT, which uses an insulated gate to control the voltage and current flow. The FGA90N33ATDTU is capable of switching voltages up to 900 volts and 10 amps, with switching speeds up to 1kHz, and low noise. With its wide range of applications, and low power draw, the FGA90N33ATDTU is a popular choice for many different projects, from hi-fi sound systems, to military applications.

FGA90N30DTU	ON Semicondu...	0.0 $	1000	IGBT 300V 90A 219W TO3PIG...
FGA90N30TU	ON Semicondu...	0.0 $	1000	IGBT 300V 90A 219W TO3PIG...
FGA90N33ATDTU	ON Semicondu...	--	1000	IGBT 330V 90A 223W TO3PIG...
FGA90N33ATTU	ON Semicondu...	--	1000	IGBT 330V 90A 223W TO3PIG...