FGAF20N60SMD Allicdata Electronics
Allicdata Part #:

FGAF20N60SMD-ND

Manufacturer Part#:

FGAF20N60SMD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 40A 62.5W TO-3PF
More Detail: IGBT Field Stop 600V 40A 75W Through Hole TO-3PF
DataSheet: FGAF20N60SMD datasheetFGAF20N60SMD Datasheet/PDF
Quantity: 324
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 324Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 75W
Switching Energy: 452µJ (on), 141µJ (off)
Input Type: Standard
Gate Charge: 64nC
Td (on/off) @ 25°C: 12ns/91ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): 26.7ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PF
Description

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The FGAF20N60SMD is a Field-Stop IGBT (FSIGBT), which is designed to be used in a wide range of applications. This type of transistor is a combination of a MOSFET and a bipolar power transistor, and is used for high power switching applications. It is well suited for motor control, lighting, home appliances, automotive and industrial drives, solar power inverters, and other high current applications.

The main advantages of the FGAF20N60SMD are its extremely low on-resistance, fast switching speed, and high temperature operation capabilities. Moreover, its high voltage capability makes it suitable for medium to high power applications.

The FGAF20N60SMD is characterized by its low saturation voltage, high current handling capability, and high reverse blocking voltage. These features make it suitable for operation in different applications, including single phase inverters, DC-DC converters, AC inverters, high-temperature switching applications, and high voltage power switches.

The working principle of a FGAF20N60SMD is also very simple and straightforward. Basically, when a gate voltage is applied, the transistor is turned on and current starts to flow through it. As more current passes through the transistor, the current gain of the device increases and the output voltage decreases. This continuous conduction eliminates the need for a separate switching device and the device can remain in a conducting state even when no input voltage is applied.

The main benefit of the FGAF20N60SMD is that it allows for higher power switching in a smaller package size than conventional bipolar transistors. Furthermore, the low on-resistance feature reduces power loss, making it an ideal choice for applications that require large operating loads. In addition, the internal temperature rise of this device is lower than that of a typical bipolar transistor, making it suitable for high temperature applications.

In conclusion, the FGAF20N60SMD is an ideal choice for a variety of applications, due to its low on-resistance feature, fast switching speed, and high temperature operation capability. This makes it a great option for motor control, lighting, home appliances, automotive, industrial drives, solar power inverters, and other high current applications. Additionally, it has the benefit of being extremely versatile, as it can be used in different types of systems, and its simple working principle makes it easy to design with.

The specific data is subject to PDF, and the above content is for reference

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