Allicdata Part #: | FGAF20N60SMD-ND |
Manufacturer Part#: |
FGAF20N60SMD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 40A 62.5W TO-3PF |
More Detail: | IGBT Field Stop 600V 40A 75W Through Hole TO-3PF |
DataSheet: | FGAF20N60SMD Datasheet/PDF |
Quantity: | 324 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 20A |
Power - Max: | 75W |
Switching Energy: | 452µJ (on), 141µJ (off) |
Input Type: | Standard |
Gate Charge: | 64nC |
Td (on/off) @ 25°C: | 12ns/91ns |
Test Condition: | 400V, 20A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 26.7ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
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The FGAF20N60SMD is a Field-Stop IGBT (FSIGBT), which is designed to be used in a wide range of applications. This type of transistor is a combination of a MOSFET and a bipolar power transistor, and is used for high power switching applications. It is well suited for motor control, lighting, home appliances, automotive and industrial drives, solar power inverters, and other high current applications.
The main advantages of the FGAF20N60SMD are its extremely low on-resistance, fast switching speed, and high temperature operation capabilities. Moreover, its high voltage capability makes it suitable for medium to high power applications.
The FGAF20N60SMD is characterized by its low saturation voltage, high current handling capability, and high reverse blocking voltage. These features make it suitable for operation in different applications, including single phase inverters, DC-DC converters, AC inverters, high-temperature switching applications, and high voltage power switches.
The working principle of a FGAF20N60SMD is also very simple and straightforward. Basically, when a gate voltage is applied, the transistor is turned on and current starts to flow through it. As more current passes through the transistor, the current gain of the device increases and the output voltage decreases. This continuous conduction eliminates the need for a separate switching device and the device can remain in a conducting state even when no input voltage is applied.
The main benefit of the FGAF20N60SMD is that it allows for higher power switching in a smaller package size than conventional bipolar transistors. Furthermore, the low on-resistance feature reduces power loss, making it an ideal choice for applications that require large operating loads. In addition, the internal temperature rise of this device is lower than that of a typical bipolar transistor, making it suitable for high temperature applications.
In conclusion, the FGAF20N60SMD is an ideal choice for a variety of applications, due to its low on-resistance feature, fast switching speed, and high temperature operation capability. This makes it a great option for motor control, lighting, home appliances, automotive, industrial drives, solar power inverters, and other high current applications. Additionally, it has the benefit of being extremely versatile, as it can be used in different types of systems, and its simple working principle makes it easy to design with.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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