FGAF40N60UFDTU

Power - Max:	100W
Supplier Device Package:	TO-3PF
Package / Case:	SC-94
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	95ns
Test Condition:	300V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	15ns/65ns
Gate Charge:	77nC
Input Type:	Standard
Switching Energy:	470µJ (on), 130µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 20A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The FGAF40N60UFDTU is a vertical double-diffused metal-oxide semiconductor insulated gate bipolar transistor (MOSFET). This type of transistor has been designed to provide a cost effective and reliable device for specific industrial applications. It is characterized by its low forward voltage, low Power Dissipation, low switching loss, high frequency operation, and low gate charge.

Application Field

This type of transistor can be utilized in a variety of industrial and commercial applications as it is known for its high frequency operation and low power consumption. Other applications include automotive applications, motor drives, power supplies, audio amplifiers, telecom and satellite systems, or any other field that requires high frequency operation and efficient power dissipation. In addition, the FGAF40N60UFDTU can be used in applications like motor drives, solar cells, light emitting diode (LED) drivers, and static switching devices.

Working Principle

The FGAF40N60UFDTU is a vertical double-diffused MOSFET with a voltage-controlled gate structure. It follows the same principle of a standard MOSFET, with the addition of two additional layers known as the body layer and the epitaxial planar layer. This type of transistor utilizes a drain current which is heavily dependent on the voltage applied to the gate. Therefore, when the voltage is increased, the output current will increase correspondingly, and vice versa when the voltage is decreased.The FGAF40N60UFDTU also has an embedded fast switching speed, which helps achieve high frequency operation. This type of transistor has a low on-state resistance, making it ideal for applications that involve switching at high frequency or high currents. Furthermore, the FGAF40N60UFDTU is known for its low power dissipation thanks to its low voltage operation.

Conclusion

In conclusion, the FGAF40N60UFDTU is a single insulated gate bipolar transistor that is suitable for a variety of industrial and commercial applications. It is characterized by its low forward voltage, high frequency operation, low Power Dissipation, low switching loss, and low gate charge. This type of transistor utilizes the same principle as a traditional MOSFET, but also has two additional layers called the body layer and the epitaxial planar layer. Additionally, it is known for its embedded fast switching speed, low on-state resistance and low power dissipation.

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