Allicdata Part #: | FGAF40N60SMD-ND |
Manufacturer Part#: |
FGAF40N60SMD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 80A 79W TO-3PF |
More Detail: | IGBT Field Stop 600V 80A 115W Through Hole TO-3PF |
DataSheet: | FGAF40N60SMD Datasheet/PDF |
Quantity: | 81 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 115W |
Supplier Device Package: | TO-3PF |
Package / Case: | TO-3P-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 36ns |
Test Condition: | 400V, 40A, 6 Ohm, 15V |
Td (on/off) @ 25°C: | 12ns/92ns |
Gate Charge: | 119nC |
Input Type: | Standard |
Switching Energy: | 870µJ (on), 260µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The FGAF40N60SMD is a single IGBT (Insulated Gate Bipolar Transistor) device, ideal for use in many different types of application, including power conversion, motor control, and power supply applications. The device features low switching loss, high frequency operation, and high current and power rating. The device is manufactured by Fairchild Semiconductor and is a fast-switching IGBT with a maximum on state voltage drop (VCE) of 0.45V.
The device has a maximum continuous drain/source current (ID) of 40A and a maximum collector-emitter voltage (VCE) of 600V. The device has a maximum DC output current rating of 160A and a maximum power dissipation of 232W. The device is capable of operating at frequencies up to 150kHz and offers a wide range of applications requiring low on-state power dissipation and low switching losses. Additionally, the device has a high tolerance for switching losses, meaning it can handle higher current levels without compromising performance.
The working principle of the FGAF40N60SMD involves the control of the voltage applied between the control electrode (gate) and the substrate. This controls the conduction of electrons between the emitter and the collector, making it possible to turn the current on and off with a wide range of speed. When voltage is applied between the gate and the substrate, a electric field is created, which allow electrons to flow. This enables the device to turn on and off at a high speed while providing low on-state losses.
The FGAF40N60SMD is suitable for many power applications, including motor control, variable speed drives, and power supplies. The device can be used in AC circuits, where it can provide higher frequency performance than traditional MOSFET devices. The device is also ideal for use in DC circuits, where the low on-state losses enable higher efficiency. Additionally, the device’s extended temperature range of -40 to +25°C makes it suitable for many industrial applications.
In conclusion, the FGAF40N60SMD is a reliable and powerful single IGBT device, offering low switching losses and a wide range of applications. The device is suitable for many power applications, including motor control, variable speed drives, and power supplies. The device features low switching loss, high frequency operation, and high current and power rating, as well as a wide temperature range for use in industrial applications. The device is manufactured by Fairchild Semiconductor and is a fast-switching IGBT with a maximum on state voltage drop (VCE) of 0.45V.
The specific data is subject to PDF, and the above content is for reference
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