FGB3040G2-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FGB3040G2-F085TR-ND |
Manufacturer Part#: |
FGB3040G2-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 400V 41A TO263 |
More Detail: | IGBT 400V 41A 150W Surface Mount D²PAK (TO-263) |
DataSheet: | FGB3040G2-F085 Datasheet/PDF |
Quantity: | 800 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 150W |
Supplier Device Package: | D²PAK (TO-263) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | -- |
Td (on/off) @ 25°C: | 900ns/4.8µs |
Gate Charge: | 21nC |
Input Type: | Logic |
Switching Energy: | -- |
Series: | Automotive, AEC-Q101, EcoSPARK® |
Vce(on) (Max) @ Vge, Ic: | 1.25V @ 4V, 6A |
Current - Collector (Ic) (Max): | 41A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FGB3040G2-F085 is a IGBT, also known as an insulated gate bipolar transistor, that is part of Infineon Technologies’ 3040G2 series of IGBTs. They are silicon-based, low-voltage and low-power field-effect transistors. This particular IGBT is capable of more than 6 amperes of current in a 4-pin package. It allows power-on operation at voltages as low as 2V, making it a suitable component for low-voltage systems. In addition, it is designed for use in high-frequency switching applications with a maximum switching frequency of 500 kHz.
The FGB3040G2-F085 is best suited for applications that require a wide range of control features, such as over-current and speed control. It is also suitable for applications with a moderate noise environment, as it has a very low switching threshold. As this IGBT is designed for use in audio amplifier systems, it ensures high fidelity sound output. Furthermore, its dedicated design allows for it to be used in Class-D amplifiers.
The FGB3040G2-F085 works by using an insulated gate to control the flow of electrons in a bipolar transistor. By using gate voltage and control signals, the current through the bipolar transistor is controlled. The insulated gate itself is composed of two parts: an N-channel MOSFET and a P-channel MOSFET. These MOSFETs are used to control the flow of electrons and the switching of the IGBT. The polarity of the gate voltage determines whether the N-channel or P-channel is active, enabling precise control of the flow of electrons.
The FGB3040G2-F085 has a dielectric breakdown voltage of 7V and a maximum operating temperature of 175° C. This single transistor can handle a peak current of 15A and a steady state current of 10A. It features a flat reverse recovery time characteristic, ensuring a smooth switching transition. The on-state voltage drop of this device is a low 0.45V at 6A, making it an efficient option for low-voltage systems.
The FGB3040G2-F085 is a reliable and efficient single transistor with a wide range of applications. It is suitable for audio frequency, Class-D amplifier and other high frequency switching applications. This IGBT boasts a low switching threshold and a low on-state voltage drop, making it an ideal choice for low-voltage and high-efficiency systems. Its ability to handle a peak current of 15A and a steady state current of 10A allows it to be suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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