FGB30N6S2T Allicdata Electronics
Allicdata Part #:

FGB30N6S2TTR-ND

Manufacturer Part#:

FGB30N6S2T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 45A 167W TO263AB
More Detail: IGBT 600V 45A 167W Surface Mount TO-263AB
DataSheet: FGB30N6S2T datasheetFGB30N6S2T Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 167W
Base Part Number: FGB30N6
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C: 6ns/40ns
Gate Charge: 23nC
Input Type: Standard
Switching Energy: 55µJ (on), 110µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Current - Collector Pulsed (Icm): 108A
Current - Collector (Ic) (Max): 45A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The FGB30N6S2T is a single IGBT belonging to Transistors family. It is one of the most widely available IGBTs on the market and is widely used in various industrial and commercial applications. It has a compact surface-mount design that is ideal for a wide variety of applications.This IGBT is widely used in switching circuits, DC-DC converters, motor controls, and phase control circuits. FGB30N6S2T has a low conduction and switching losses, excellent thermal management, high reliability, and an extended temperature range. The low on resistance of this IGBT ensures that it operates at a low voltage and frequency, while its low switching losses minimize the power loss.The working principle of FGB30N6S2T is based on the principle of the bipolar transistor. It consists of two silicon layers and one emitter layer, with the emitter layer typically being made of silicon carbide. The two silicon layers and the emitter layer are connected in a manner similar to the classic NPN bipolar transistor. However, unlike the bipolar transistor, the FGB30N6S2T uses an additional layer that acts as an insulator and provides support for the two silicon layers.When a current is applied to the gate of the FGB30N6S2T, it diverts the current from the base to the emitter layer and the two silicon layers become electrically connected. This causes the current to flow through the two silicon layers and the emitter layer, creating current flow between the gate and the emitter. This current flow turns the IGBT on, allowing it to control the flow of power in the circuit.The FGB30N6S2T has a wide range of applications like battery chargers, induction heating systems, DC/AC inverters, rectifiers, current limiters and UPS\'s. This IGBT is also used in power systems and motor control circuits, such as those used in electric vehicles. It provides greater control than other types of transistors, allowing precision control of the power supplied to the motor or other circuit.The FGB30N6S2T is an excellent choice for a number of applications as it provides reliable operation, has low switching losses and a wide temperature range. It is also suitable for use in various industrial and commercial applications where its high reliability and cost effectiveness make it an ideal choice.

The specific data is subject to PDF, and the above content is for reference

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