FGB3440G2-F085 Discrete Semiconductor Products

Power - Max:	166W
Supplier Device Package:	TO-263AB
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	--
Td (on/off) @ 25°C:	1µs/5.3µs
Gate Charge:	24nC
Input Type:	Logic
Switching Energy:	--
Series:	Automotive, AEC-Q101, EcoSPARK®
Vce(on) (Max) @ Vge, Ic:	1.2V @ 4V, 6A
Current - Collector (Ic) (Max):	26.9A
Voltage - Collector Emitter Breakdown (Max):	400V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

FGB3440G2-F085 is a type of transistor, specifically, an Insulated Gate Bipolar Transistor, known as IGBT, and more specifically, a signal IGBT. It is primarily used by manufacturers in the application field of power conversion, including power factor correction and motor control. This article will discuss the application field and working principle of this particular IGBT.

Application Field

The FGB3440G2-F085 has many different applications in the power conversion field. For example, it is often used in switching mode power supplies and is suitable for applications requiring high frequency operation such as PFC (Power Factor Correction) and motor control applications.These applications derive from FGB3440G2-F085’s ability to operate at high speeds and high power efficiency, due to the features such as its low Ron (On resistance) and its fast switching times, allowing it to provide a higher frequency than other devices. FGB3440G2-F085\'s can be used in many different environments including industrial, automotive, consumer, computer, telecommunications and digital imaging applications. Due to its unique features, it can be used in a variety of applications requiring high reliability, high power and high speed.

Working Principle

The FGB3440G2-F085 is a type of transistor known as an Insulated Gate Bipolar Transistor (IGBT). It works by applying an electric charge to an insulated gate, which then generates a voltage at the transistor\'s terminals. This voltage allows the transistor to control the current that can pass through it.Like other IGBTs, the FGB3440G2-F085 has a lower gate threshold than traditional bipolar transistors, along with a low gate charge, allowing it to operate at much higher frequencies than a standard bipolar transistor. The IGBT is also able to switch fast and can handle high peak currents without heating up.In terms of power efficiency, the IGBT has a comparably low Ron (On resistance) and high efficiency rates, making it suitable for applications requiring high power conversion.

Conclusion

The FGB3440G2-F085 is an IGBT transistor, with unique features such as fast switching times and high power efficiency, making it suitable for high frequency operation and power conversion applications. This article has discussed its application field as well as its working principle, thus allowing its users to gain an insight into its use and capabilities.

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