FGD3040G2-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FGD3040G2-F085TR-ND |
Manufacturer Part#: |
FGD3040G2-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 400V 41A 150W DPAK |
More Detail: | IGBT 400V 41A 150W Surface Mount TO-252AA |
DataSheet: | FGD3040G2-F085 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | Automotive, AEC-Q101, EcoSPARK® |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Current - Collector (Ic) (Max): | 41A |
Vce(on) (Max) @ Vge, Ic: | 1.25V @ 4V, 6A |
Power - Max: | 150W |
Switching Energy: | -- |
Input Type: | Logic |
Gate Charge: | 21nC |
Td (on/off) @ 25°C: | -/4.8µs |
Test Condition: | 300V, 6.5A, 1 kOhm, 5V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Base Part Number: | FGD3040 |
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The FGD3040G2-F085 is a general-purpose, non-insulated type IGBT module, which is used in a wide range of applications.
The FGD3040G2-F085 offers a wide voltage range and a rated electric current of 30A (continuous conduction). This IGBT can be operated at a temperature as low as -55°C and as high as 150°C. The FGD3040G2-F085 is also highly reliable and has a high surge current capability.
The FGD3040G2-F085 is primarily used in applications such as motor controls, power supplies, inverters, and motor drives. It is also suitable for use in a wide range of other electronic applications, including uninterruptible power systems (UPSs) as well as battery fast charging and discharging.
The working principle of the FGD3040G2-F085 is based on an insulated gate bipolar transistor (IGBT). It is composed of three main components: an emitter, collector and gate. The emitter is responsible for releasing electrons into the drift region, while the collector absorbs these electrons, creating a current. The gate is used to control the flow of electrons in the drift region, allowing current to flow or not depending on the voltage applied to the gate.
When a positive voltage is applied to the gate, it will create a downward electric field. This, in turn, sets up a forward bias that allows a strong current to flow from the emitter to the collector. When a negative voltage is applied to the gate, the electric field is reversed, which blocks the current from flowing, thus turning the IGBT off.
In addition to its ability to control the current flowing through the device, the FGD3040G2-F085 also has several advantages compared to other types of transistors. For example, it has a low on-voltage drop, meaning that it requires less power to turn it on, and it has a low switching noise, making it ideal for applications where noise needs to be kept at a minimum.
In conclusion, the FGD3040G2-F085 is a high-performance, general-purpose IGBT module that is suitable for a wide range of applications. Its ability to control the current flowing through the device, coupled with its low on-voltage drop and low switching noise, makes it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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