FGD3N60LSDTM Discrete Semiconductor Products |
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Allicdata Part #: | FGD3N60LSDTMTR-ND |
Manufacturer Part#: |
FGD3N60LSDTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 6A 40W DPAK |
More Detail: | IGBT 600V 6A 40W Surface Mount D-Pak |
DataSheet: | FGD3N60LSDTM Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 250µJ (on), 1mJ (off) |
Base Part Number: | FGD3N60 |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Reverse Recovery Time (trr): | 234ns |
Test Condition: | 480V, 3A, 470 Ohm, 10V |
Td (on/off) @ 25°C: | 40ns/600ns |
Gate Charge: | 12.5nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 40W |
Vce(on) (Max) @ Vge, Ic: | 1.5V @ 10V, 3A |
Current - Collector Pulsed (Icm): | 25A |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Introduction
TheFGD3N60LSDTMis a single IGBT transistor. It comes included with a wide range of features that make it suitable for a variety of applications. This article will provide an overview of these applications and how they work.
Application Field
The FGD3N60LSDTM IGBT transistor is primarily used in a range of industrial, commercial, and automotive applications. It can be used as an electronic switch in power electronic designs, as it has a low turn-on voltage, high speed, and a low gate driver voltage. The transistor has a wide frequency range of up to 5GHz, making it ideal for high-frequency switching. It is also well-suited for power supply designs, power management systems, and motor control applications. It has been used in a variety of applications, such as in AC and DC motor control, lighting systems, solar inverters, and welding applications.
Working Principle
The FGD3N60LSDTM IGBT transistor works on the principle of the insulated-gate bipolar transistor (IGBT). An IGBT is a type of power transistor composed of two distinct p-n junctions, one between the gate and collector, and the other between the gate and emitter. The junction between the gate and collector is controlled by the gate voltage, and this controls the current flow between the collector and emitter during conduction. When the voltage is increased, the transistor is turned on, allowing the current to flow. When the voltage is decreased, the transistor is turned off and the current flow is stopped. The IGBT is ideal for use in switching applications, as it allows for high-frequency switching and fast switching speeds.
Conclusion
The FGD3N60LSDTM IGBT transistor is an ideal choice for a wide range of applications, as it has many features that make it well-suited for these applications. It has a low turn-on voltage, high speed, and a low gate driver voltage, making it well-suited for power electronic designs. It also has a wide frequency range, making it ideal for high-frequency switching. Finally, it is well-suited for power supply, power management systems, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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