FGD3N60LSDTM Allicdata Electronics

FGD3N60LSDTM Discrete Semiconductor Products

Allicdata Part #:

FGD3N60LSDTMTR-ND

Manufacturer Part#:

FGD3N60LSDTM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 6A 40W DPAK
More Detail: IGBT 600V 6A 40W Surface Mount D-Pak
DataSheet: FGD3N60LSDTM datasheetFGD3N60LSDTM Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 250µJ (on), 1mJ (off)
Base Part Number: FGD3N60
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: --
Reverse Recovery Time (trr): 234ns
Test Condition: 480V, 3A, 470 Ohm, 10V
Td (on/off) @ 25°C: 40ns/600ns
Gate Charge: 12.5nC
Input Type: Standard
Series: --
Power - Max: 40W
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Current - Collector Pulsed (Icm): 25A
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction

TheFGD3N60LSDTMis a single IGBT transistor. It comes included with a wide range of features that make it suitable for a variety of applications. This article will provide an overview of these applications and how they work. 

Application Field

The FGD3N60LSDTM IGBT transistor is primarily used in a range of industrial, commercial, and automotive applications. It can be used as an electronic switch in power electronic designs, as it has a low turn-on voltage, high speed, and a low gate driver voltage. The transistor has a wide frequency range of up to 5GHz, making it ideal for high-frequency switching. It is also well-suited for power supply designs, power management systems, and motor control applications. It has been used in a variety of applications, such as in AC and DC motor control, lighting systems, solar inverters, and welding applications.

Working Principle

The FGD3N60LSDTM IGBT transistor works on the principle of the insulated-gate bipolar transistor (IGBT). An IGBT is a type of power transistor composed of two distinct p-n junctions, one between the gate and collector, and the other between the gate and emitter. The junction between the gate and collector is controlled by the gate voltage, and this controls the current flow between the collector and emitter during conduction. When the voltage is increased, the transistor is turned on, allowing the current to flow. When the voltage is decreased, the transistor is turned off and the current flow is stopped. The IGBT is ideal for use in switching applications, as it allows for high-frequency switching and fast switching speeds.

Conclusion

The FGD3N60LSDTM IGBT transistor is an ideal choice for a wide range of applications, as it has many features that make it well-suited for these applications. It has a low turn-on voltage, high speed, and a low gate driver voltage, making it well-suited for power electronic designs. It also has a wide frequency range, making it ideal for high-frequency switching. Finally, it is well-suited for power supply, power management systems, and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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