FGD3N60UNDF Discrete Semiconductor Products

Switching Energy:	52µJ (on), 30µJ (off)
Base Part Number:	FGD3N60
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	21ns
Test Condition:	400V, 3A, 10 Ohm, 15V
Td (on/off) @ 25°C:	5.5ns/22ns
Gate Charge:	1.6nC
Input Type:	Standard
Series:	--
Power - Max:	60W
Vce(on) (Max) @ Vge, Ic:	2.52V @ 15V, 3A
Current - Collector Pulsed (Icm):	9A
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction to FGD3N60UNDF

The FGD3N60UNDF is an insulated-gate bipolar transistor (IGBT) with a conductive breakdown voltage of 600 volts and a maximum continuous output current of 3 amps. This IGBT is part of the FGA family of transistors made by Fairchild Semiconductor. It is designed as a switch or as an amplifier of forward-transconductance gain. The transistor is also suitable for use in high power applications due to its superior insulation performance and superior avalanche energy absorption characteristics.

Applications of FGD3N60UNDF

The FGD3N60UNDF is a versatile transistor and can be used in a variety of applications. It can be used as an input stage for an amplifier, as a switch for a motor control circuit, as a high voltage switch in a DC/DC converter, in an inverter/converter, and in pulse-width modulation (PWM) circuits. The FGD3N60UNDF can also be used as a power switching device in a DC/AC power inverter, or as a main power switch in a DC/DC converter. Furthermore, it can be used in high-speed switching applications where fast switching is required.

Working Principle of FGD3N60UNDF

The FGD3N60UNDF is an N-channel IGBT which is composed of an insulated gate and two PN junctions (source and drain). When an input control voltage is applied to the insulated gate, the IGBT becomes conductive and allows current to flow from the source to drain. The speed at which current flows can be controlled depending on the applied gate voltage. Since IGBTs are voltage controlled devices, they can provide very efficient power conversion compared to other types of transistors. The FGD3N60UNDF also features an integrated Free-Wheeling Diode (FWD). The FWD protects the IGBT from reverse voltage transients by providing a reverse current path when the IGBT is in off-state. Additionally, the FGD3N60UNDF utilizes the "dual-mode" technology which protects the IGBT from short-circuits and thermal overloads. The "dual-mode" technology comes into play when the current or junction temperature of an IGBT exceeds its rated values. This feature allows the IGBT to switch to a higher resistance state which limits the current, thus effectively protecting the IGBT from damage.

Conclusion

The FGD3N60UNDF is a versatile insulated-gate bipolar transistor (IGBT) which features a high voltage rating of 600 volts and a maximum continuous output current of 3 amps. It can be used in a variety applications such as amplifiers, motor control circuits, inverters, and PWM circuits. This IGBT also features an integrated Free-Wheeling Diode (FWD) and the dual-mode protection which allows the IGBT to switch to a higher resistance state when its current or junction temperature exceeds its rated values.

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