FGP5N60LS

Power - Max:	83W
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 5A, 10 Ohm, 15V
Td (on/off) @ 25°C:	4.3ns/36ns
Gate Charge:	18.3nC
Input Type:	Standard
Switching Energy:	38µJ (on), 130µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	3.2V @ 12V, 14A
Current - Collector Pulsed (Icm):	36A
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The FGP5N60LS is a silicon epitaxial collector type IGBT that includes a startup circuit and a flyback diode in a single package. This single IGBT provides a highly reliable, cost-effective solution with minimized external components and simplifieing the circuit design. In addition, the FGP5N60LS offers the convenience of very low voltage drive, fast switching, enhanced dV/dt, low on-resistance and good avalanche characteristics.ApplicationsThe FGP5N60LS provides a wide range of applications, including AC and DC motor control, uninterruptible power supplies, battery management and charging, inverters, lighting systems, welding machines, switching power supplies, home appliances, and more. Working PrincipleThe FGP5N60LS is an isolated gate bipolar transistor that is manufactured using state-of-the-art advanced trench technology. It features a control gate and a collector, both of which are insulated from each other by a layer of silicon dioxide. The control gate controls the flow of electrons from the collector to the emitter. When the control gate is switched off, the flow of electrons from the collector to the emitter is blocked, allowing only sufficient current to flow from the emitter to the collector. Furthermore, a startup circuit is integrated with the FGP5N60LS, which ensures that the correct current is applied to the collector when the device is turned off. This startup circuit also prevents the device from being damaged due to overcurrent.In addition, a flyback diode is integrated with the FGP5N60LS, which protects it from reverse polarity voltages or high dV/dt by allowing current to flow in the opposite direction. This diode also helps maintain a low reverse conduction voltage, which is essential for a robust operation. The FGP5N60LS can be used in a wide range of applications due to its low on-state resistance of only 4.0 milliohms at 125°C. In addition, it has an operating frequency up to 22 kHz, an isolated gate drive, and an operating temperature range of -40 to 150°C. Overall, the FGP5N60LS is an ideal choice for applications requiring robust operation, low on-state resistance, and fast switching. It is an excellent solution for AC and DC motor control, uninterruptible power supplies, battery management and charging, inverters, lighting systems, welding machines, switching power supplies, and home appliances.

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