FGP50C-E3/73

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The FGP50C-E3/73 diode is a modern, room-temperature, single-phase bridge rectifier. It is designed to provide a 5A maximum forward operating current and 730V peak reverse voltage, and is suitable for industrial applications. The component contains 4 silicon diodes which are connected in a bridge arrangement.

This component is suitable for use in a number of different applications. It is resistant to temperature extremes, meaning it can be used in a variety of harsh environments. It is suitable for use in high current rectifier applications such as motor control circuits, AC and DC power supplies, inverters, battery chargers and other high current rectifier applications. Additionally, it has low forward voltage drop resulting in improved performance in low power applications. Finally, it has high peak surge current capability allowing for use in switching power supplies and batteries.

The component operates in 4 distinct modes. In the forward conduction mode, the component is forward biased, resulting in current flowing from the anode to the cathode. When the diode is reverse biased, the component is in reverse blocking mode, resulting in current not being allowed to pass. In the avalanche breakdown mode, the component is reverse biased and has too high of a voltage applied to it, resulting in a breakdown of the barrier and current passing through. Finally, in the reverse recovery mode, the component is reverse biased, and after the voltage has been removed, the diode’s capacitance will cause a current flow in the reverse direction.

The component is made of a semiconductor material, typically silicon, and is composed of two oppositely doped regions which form a p-n junction. This p-n junction is the source of the rectifying characteristics of the component. As electrons are created and cross the junction, they cause a current to flow, allowing the component to function as a rectifier. The component is able to control the amount of current that flows by adjusting the applied voltage to the component.

The component is designed to be used in the most extreme environments, meaning it can be used with confidence in harsh operating conditions. It is made with a robust structure which contains 4 individual silicon diodes for increased current handling capability. It is also built to keep out dust and other contaminants, ensuring reliable performance. Finally, the component has a low forward voltage drop, enabling it to be used in low power applications. With a plethora of applications and robust design, the FGP50C-E3/73 diode is a reliable choice for any industrial application.

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