FGP5N60UFDTU Discrete Semiconductor Products

Power - Max:	81W
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	30ns
Test Condition:	400V, 5A, 20 Ohm, 15V
Td (on/off) @ 25°C:	6ns/44ns
Gate Charge:	19.5nC
Input Type:	Standard
Switching Energy:	75µJ (on), 59µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 5A
Current - Collector Pulsed (Icm):	15A
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The FGP5N60UFDTU, also known as Insulated Gate Bipolar Transistor (IGBT), is a single-chip power transistor for medium- and high-power applications. It is based on the trench gate and planar structure of the IGBT structure, enabling high-speed switching operation with low on-state voltage, low switching loss and low driving current. The FGP5N60UFDTU is a very reliable and efficient device that can switch high-voltage, high-current outputs in lighting, industrial, and automotive applications.The FGP5N60UFDTU can handle much higher power levels than ordinary discrete transistors, making it suitable for many medium- and high-power applications, such as motor drives and high-frequency inverters, variable-speed AC and DC drives, UPS, switching power supplies, and motor controllers. Its main application fields cover lighting and energy, industrial automation, automotive, and consumer applications. All of these fields require the use of a high-power transistor capable of handling high current and voltage levels at high switching frequencies.In automotive applications, the FGP5N60UFDTU is mainly used as a switch in inverter AC/DC drives, engine control units, and related-control circuits. It combines the advantages of MOSFETs and bipolar transistors to offer superior performance in a variety of car applications, including starting and operation control, air conditioning, charging, and so on. It is also used in industrial and consumer fields, such as industrial motor drives and consumer electronics, where it can provide fast switching speeds, high efficiency levels, and improved power system performance.The FGP5N60UFDTU works based on the same principles as other IGBTs, i.e. a hybrid from MOSFET and traditional bipolar technology. The device has two separate components: a power MOSFET and an insulated gate bipolar transistor. In operation, a current flows through the chip and this triggers the gate, which turns on the MOSFET. The voltage generated at the MOSFET turns on the bipolar transistor as well. This allows for a smooth transformation process between the two.When the device is off, the gate of the MOSFET is open and no current flows through the device. When the device is on, the gate of the MOSFET is closed, allowing current to flow through the device. This current is switched on and off via modulation of the gate voltage, which is determined by the voltage of the gate electrode. The device also offers low switching losses, meaning that it can switch at higher frequencies with less power waste.In conclusion, the FGP5N60UFDTU is a single-chip power transistor for medium- and high-power applications. It offers excellent performance for a variety of applications, including lighting and energy, industrial automation, automotive, and consumer applications. Its working principle is based on the combination of MOSFET and traditional bipolar technology, allowing for a smooth transformation process and low switching losses. The device can thus switch high-voltage, high-current outputs quickly and efficiently, making it an ideal device for many medium- and high-power applications.

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