FJYF2906PWD

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	150mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563F

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IntroductionFJYF2906PWD is a type of single bipolar junction transistor (BJT), which can be used in completing various tasks related to electricity and electronics. The transistor is used in many commercial and industrial applications and is reliable and efficient enough to meet the requirements of the most demanding applications. The FJYF2906PWD is also part of a large range of BJT transistors with different parameters and characteristics.Application FieldThe FJYF2906PWD single bipolar junction transistor is a versatile component suitable for a wide range of applications. It can be used in amplifiers, oscillators, switching circuits and other circuits that require a high degree of accuracy and speed. It is particularly suitable for circuits requiring a low operating voltage, such as in digital circuits.The FJYF2906PWD can also be used in analog circuits, such as power supplies, inverters, voltage regulators and current regulators. The transistor can be used in combination with other components for applications with stringent parameters, such as in feeding motors, monitoring systems, industrial control systems and radar sensors. Working PrincipleThe FJYF2906PWD single bipolar junction transistor works by utilizing the effect of the NPN (Negative-Positive-Negative) structure of the transistor. The transistor has three terminals, labelled as collector (C), base (B) and emitter (E).When a small current is applied to the base terminal, the current is amplified and flows between the collector and emitter terminals due to the effect of the built-in voltage applied to the NPN structure. The current gain of the transistor, referred to as the Beta value and symbolized by β, is proportional to the voltage applied to the base terminal.The FJYF2906PWD is an efficient and reliable single bipolar junction transistor which can be used in a variety of applications, including amplifiers, oscillators, switching circuits, voltage regulators and current regulators. By taking advantage of its low operating voltage and high current gain, the FJYF2906PWD is an ideal choice for various electronic projects.

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