FJYF2906TF Allicdata Electronics
Allicdata Part #:

FJYF2906TF-ND

Manufacturer Part#:

FJYF2906TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.15A SOT563F
More Detail: Bipolar (BJT) Transistor PNP 40V 150mA 250MHz 150m...
DataSheet: FJYF2906TF datasheetFJYF2906TF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563F
Description

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The FJYF2906TF is a single Bipolar Junction Transistor (BJT) component. It is typically used in applications such as low noise amplifiers, analog and digital circuits, power circuits, and other applications requiring low-power and low-noise operation. The FJYF2906TF features a low collector-emitter saturation voltage, a wide forward biased base-emitter voltage range, and low noise operation due to its low base-emitter leakage current. The FJYF2906TF is composed of an N-type semiconductor material and has a maximum collector current of 800mA.
The FJYF2906TF works on the principle of current amplification by the application of electric current at the base. The base-emitter voltage of the device is applied with a forward bias to allow current to flow from the emitter to the base. The current is then amplified through the collector terminal and the electric current can be modulated based on the signals received. The FJYF2906TF is useful when a low noise input is required for amplification and when a low-power operation is desired.
The FJYF2906TF can be used in applications such as amplifiers, mixers, modulators, audio signals, power circuits, and other low-noise applications. Due to its low saturation voltage and low base-emitter leakage current, it is suitable for situations where low-power, low-noise operation is desired such as power circuits. It also can be used in audio applications as it can provide a low noise input signal. Due to its low base-emitter voltage range, it can provide a wide range of gain which results in a better signal-to-noise ratio. It can also be used in mixers and modulators to provide a clean signal.
The FJYF2906TF is also useful in the power circuits applications as it can provide a low power consumption with a high efficiency. It can be used to regulate voltage and current on the load side of the circuit, which can help reduce the power consumption of the circuit as well as reduce the heat dissipation from the circuit. The FJYF2906TF can also be used to protect the voltage and current in the power circuit from over-voltage and over-current.
In conclusion, the FJYF2906TF is a single Bipolar Junction Transistor (BJT) component that is used in various applications that require low power consumption and low-noise operation. The FJYF2906TF works on the principle of current amplification by the application of electric current at the base, and its low saturation voltage and low base-emitter leakage current helps to achieve the desired low-power and low-noise operation. It can be used in a variety of applications such as amplifiers, mixers, modulators, audio signals, power circuits and more.

The specific data is subject to PDF, and the above content is for reference

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