
FLZ2V2B Discrete Semiconductor Products |
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Allicdata Part #: | FLZ2V2BTR-ND |
Manufacturer Part#: |
FLZ2V2B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 2.3V 500MW SOD80 |
More Detail: | Zener Diode 2.3V 500mW ±4% Surface Mount SOD-80 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 2.3V |
Tolerance: | ±4% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 55µA @ 700mV |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 |
Base Part Number: | FLZ2V2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, the fundamental building blocks of many electronics systems, are vital components of the circuitry. One particular type of diode, the Zener diode, is used to regulate voltage and provide protection against reverse biasing and other electrical hazards. The FLZ2V2B Zener diode is one such device that offers both performance benefits and convenience for a wide variety of electronics applications.
The FLZ2V2B is designed to effectively regulate both AC and DC voltage levels within an electrical circuit. This allows for higher system safety by protecting the components from transients and other disturbances. With the capability of providing a maximum reverse breakdown voltage of 2.1V, and a maximum power rating of 100mW, it is suitable for a variety of applications including power supplies, test equipment, and more.
The FLV2V2B Zener diode works by utilizing a reverse breakdown mechanism. In operation, as the voltage across the diode increases, a population of electrons is released (or "avalanched") within the construction material, thereby developing a low resistance conduction path to the other terminal. This process is initiated at a specific reverse voltage level (or "breakdown voltage"). This breakdown voltage is designed to be consistent over a wide range of temperature and current levels.
The materials used in the construction of our FLZ2V2B Zener diode are chosen specifically for their high performance characteristics. The process of doping silicon dioxide with arsenic provides a material with the ability to regulate a consistent breakdown voltage at room temperature. The silicon dioxide material is extremely resistant to heat and adverse environmental conditions, resulting in the FLZ2V2B’s long life and ability to withstand high surge current levels. The cathode and anode connection leads are constructed from thick copper, providing better conducibility, increased electrical contact and improved resistance to corrosion.
The FLZ2V2B Zener diode is a high performance device, providing excellent voltage regulation and reverse biasing protection in a variety of electronic environments. Utilizing state of the art materials and design techniques, it is an ideal choice for applications requiring a reliable and high performance diode. It is available in a through-hole format for ease of assembly and is RoHS compliant.
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