FLZ6V2A Allicdata Electronics

FLZ6V2A Discrete Semiconductor Products

Allicdata Part #:

FLZ6V2ATR-ND

Manufacturer Part#:

FLZ6V2A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 5.9V 500MW SOD80
More Detail: Zener Diode 5.9V 500mW ±3% Surface Mount SOD-80
DataSheet: FLZ6V2A datasheetFLZ6V2A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 5.9V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 8.5 Ohms
Current - Reverse Leakage @ Vr: 3.3µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Base Part Number: FLZ6V2
Description

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FLZ6V2A Application Field and Working Principle

Introduction

FLZ6V2A is a Zener diode single product developed by Fairchild Semiconductor Products in the USA. Fairchild Semiconductor Products, a member of the Standard Microsystems Corporation (SMC) family, provides high-performance circuits integrated into power management, signal management and signal conditioning applications for the automotive, telecommunications, computer, industrial and consumer markets. The FLZ6V2A is part of its Zener diode product family, and is widely used in a variety of applications.

Application Field

FLZ6V2A is widely used in the field of circuit protection, voltage regulation and switching circuits. The advantage of this product lies in its high breakdown voltage of 6V and its low parasitic capacitance of only 2pF. It can be used in a variety of protection circuits, voltage references, circuit control, audio electronics and other application circuits.

Working Principle

The FLZ6V2A operates by using the physical principles of the reverse breakdown effect of PN junctions in semiconductors. When a certain voltage is applied across the PN junction, a large reverse current flow flows from the P-type region to the N-type region and causes a breakdown of the junction. The breakdown voltage of the PN junction corresponds to the Zener voltage of the Zener diode.The current-voltage characteristic of the Zener diode is positively skewed, and the greater the value of the breakdown voltage of the PN junction, the lower the slope of the curve when the voltage applied varies with current (I-V curve).

Advantages

FLZ6V2A Zener diodes have a low rate of temperature coefficient, which improves the stability of voltage regulation, and the maximum temperature coefficient is nominally 1.5℃/V. The device has a polysilicon reduction layer; when the voltage applied to the diode exceeds the reduced layer, the diode will be in a high-current, low-impedance Zener state, thus providing protection against overvoltage and overcurrent. And the thermal resistivity is small, which makes the device more durable and has a larger dynamic range.

Conclusion

FLZ6V2A, as a Zener diode single product developed by Fairchild Semiconductor Products in the USA, has been widely used in the field of circuit protection, voltage regulation and switching circuits due to its advantages of high breakdown voltage of 6V, low parasitic capacitance of 2pF and low temperature coefficient. It also has a polysilicon reduction layer, making it suitable for protection of overvoltage and overcurrent while also having a good thermos resistance. All these features make FLZ6V2A a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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