
Allicdata Part #: | FM22L16-55-TGRA-ND |
Manufacturer Part#: |
FM22L16-55-TG |
Price: | $ 24.56 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FRAM 4M PARALLEL 44TSOP II |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16)... |
DataSheet: | ![]() |
Quantity: | 1993 |
1 +: | $ 24.56000 |
10 +: | $ 23.82320 |
100 +: | $ 23.33200 |
1000 +: | $ 22.84080 |
10000 +: | $ 22.10400 |
Series: | F-RAM™ |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | FM22L16 |
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The FM22L16-55-TG is a type of dual inline package (DIP) memory that is used in various applications. The memory is a 16K memory that is organized into 16K words of 8 bits each. This type of memory is normally sold in 56-lead configurations and has an operating voltage of 3.3 V, 5 V or 12 V. It is also capable of providing an access time of 55 ns at 25℃.
The general applications of FM22L16-55-TG are used in data processing and telecommunications. This type of memory is used in applications such as data analysis and transmission, voice recognition and voice synthesis, image processing and recognition, memory intensive computing, and robotics control. The FM22L16-55-TG is also used in applications such as automotive, computer peripheral, industrial control, and instrumentation.
The FM22L16-55-TG memory device is based on asynchronous CMOS dynamic RAM technology. The memory device is designed to integrate fast access times, low power dissipation, and read-write cycle times of 55 nanoseconds. The memory device is available in the standard 56-pin DIP form factor, and is offered in the 3.3V, 5.0V and 12V operating voltages. The memory device features TTL CMOS compatibility and a fast read-write cycle.
The major features of FM22L16-55-TG memory device include a high speed IO bus interface, a wide operating temperature range, a max current of 37mA at 5V and a power-down feature. The device is also equipped with a signal-detect output and a data valid output. This type of memory device is designed for use with microcomputers, instrumentation, and embedded system applications.
The working principle of FM22L16-55-TG is to provide a fast read-write cycle time of 55 nanoseconds with the 5V operating voltage. The memory device is a type of three-state CMOS memory that can maintain data stored in a single cell. It works by providing a clock signal and the data stored in a single cell is either lost or retained after the clock pulse is stopped. The memory device enables faster data transfer rate between the memory and the logic circuitry, as compared to other memory devices.
The FM22L16-55-TG memory device is designed for reliable, high performance operation in a variety of different applications. This type of memory device is suitable for applications where speed and high reliability are essential. In addition, the memory device is compliant with the RoHS and WEE directives, making it the perfect choice for use in environmentally sound applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
FM22LD16-55-BGTR | Cypress Semi... | 18.98 $ | 1000 | IC FRAM 4M PARALLEL 48FBG... |
FM22L16-55-TGTR | Cypress Semi... | 18.98 $ | 1000 | IC FRAM 4M PARALLEL 44TSO... |
FM22L16-55-TG | Cypress Semi... | -- | 1993 | IC FRAM 4M PARALLEL 44TSO... |
FM22LD16-55-BG | Cypress Semi... | -- | 900 | IC FRAM 4M PARALLEL 48FBG... |
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