FM22L16-55-TGTR

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The FM22L16-55-TGTR is a reprogrammable memory from Fujitsu which is widely used in a variety of memory applications. It is a low-voltage 16-megabit storage device and is available in a variety of packages.

This device has an integrated ECC engine which provides 4 bits of error correction capability. It is manufactured using a 0.18μm process, which enables it to work reliably and provide high performance. Its fast access time of 55ns makes it suitable for use in a wide range of applications.

The FM22L16-55-TGTR is widely used in memory applications such as automotive and industrial controllers, digital signal processors, data acquisition systems, video processors and other applications where a large amount of memory is needed.

The working principle of FM22L16-55-TGTR is based on the use of an infinite number of latch-based registers, each with its own control current path. The multiple-register circuit is connected to the processor via nodes. These nodes are connected to the corresponding registers, and each register can store 8 bits of data. The register is constructed from MOS transistors and diodes.

The data stored in the registers is read out by applying a suitable combination of address signals to the memory module. This generates a control voltage to the corresponding registers, which provides the output for the address input. The output is then sent to the processor, which processes the data according to the instructions in the memory. The data can be written back to the memory, or it can be transferred to other memory devices.

The FM22L16-55-TGTR also supports many other features such as erase function, write protection, and LVDS and PCM features. It also has immunity to ESD and EMI. Furthermore, the device is RoHS compliant and meets the requirements of MIL-STD-883.

The FM22L16-55-TGTR is a reliable and powerful memory device which is widely used in various applications. It offers high performance, low power consumption and ECC support, making it suitable for a variety of applications which demand high-end memory needs.

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