FMA11AT148

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The FMA11AT148 is a type of pre-biased transistors array used in integrated-circuit manufacturing, and is generally categorized as a bipolar junction transistor (BJT). It is widely applicable for numerous applications, and is available with different pin configurations for 5-lead, 6-lead, 8-lead, and 10-lead packages.

The FMA11AT148 is classified as a small signal NPN transistor, which makes it well-suited for low-level signal transduction. Its rapid switching speed and low switching threshold voltage make it suitable for applications in high-frequency circuits, as well as in optical drivers, test and measurement equipment, consumer electronics, or other devices and systems requiring small signal transduction.

The FMA11AT148 is a pre-biased device, which means that it has been pre-set with the base-emitter voltage (VBE), collector-emitter voltage (VCE), and collector-base voltage (VCB) preset. This allows for quick and easy optimization of various transistor parameters such as gain and output impedance, as well as improved efficiency and reliability.

The FMA11AT148 is able to operate at a high power level of up to 200 mW per lead, with a maximum collector current of 3.0 A. It has a maximum dissipation power of up to 4 W, and is equipped with a maximum voltage of up to 50 V. It also has a current gain (hFE) of up to 550 and a reverse current offset of 5mA.

The working principle of the FMA11AT148 is based on the fact that current will flow between the base and emitter junctions of a transistor if there is a voltage difference between them. When the base-emitter voltage increases sufficiently, the transistor will enter a forward-bias condition in which current can flow between the collector and emitter junctions. This, in turn, allows controlled current flow from the collector to the base and from the emitter to the collector, making it possible to convert electrical signals from low-level analog input signals to larger high-level output signals.

The FMA11AT148 is equipped with several features which improve its performance and reliability. These features include low power operation for improved efficiency, low saturation voltage for increased gain, low noise levels for reduced signal distortion, high current and power ratings for enhanced reliability, and zener protection for improved overvoltage protection. In addition, the FMA11AT148 also has a wide temperature operating range and is RoHS (Restriction of Hazardous Substances) compliant.

Overall, the FMA11AT148 pre-biased transistors array is a versatile and reliable electronic device which can be used for a wide range of applications. Its features such as low power consumption, adherence to international safety regulations, and improved signal fidelity make it ideal for use in a wide variety of circuits, devices, and systems.

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