Allicdata Part #: | FMA4AT148TR-ND |
Manufacturer Part#: |
FMA4AT148 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL PNP SMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | FMA4AT148 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.08186 |
6000 +: | $ 0.07690 |
15000 +: | $ 0.07194 |
30000 +: | $ 0.06615 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | MA4 |
Supplier Device Package: | SMT5 |
Package / Case: | SC-74A, SOT-753 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FMA4AT148 is a pre-biased array of high speed bipolar junction transistors (BJTs). As a bipolar transistor, it is composed of two pn junctions which are connected together in a three-terminal configuration. The FMA4AT148 array has four BJTs in a single package, with each feed-through junction able to provide a 20mA current peak when operating at its rated voltage of 10V. The FMA4AT148 is an example of a pre-biased array, which is an array of BJTs that have a bias voltage already applied to them before the device is powered or placed in the circuit. Pre-biased arrays are often used to simplify the design of circuits, since the transistors begin to operate in their correct linear state immediately upon application of power.
The principle of operation for the FMA4AT148 array is based on the standard principles of bipolar transistor operation. Two pn junctions are connected together in a three-terminal configuration to form the BJT. As current is applied to the one junction, it the flow of current is proportional to the amount of current applied, allowing a current gain to be achieved. This means that a small amount of current entering the base of the transistor can cause a much larger current to flow through the collector-emitter path. This gain is referred to as the transistor\'s β factor. The FMA4AT148 array comes pre-biased so that each transistor has a set bias voltage which allows it to reach its maximum current gain when power is applied.
The FMA4AT148 is often used in high-speed switching circuits. Its high current gain allows it to rapidly switch between the two states of on and off. This makes it ideal for a variety of applications such as signal processing and amplification, power switching, and power supplies. Additionally, the FMA4AT148 array\'s pre-biased voltage also greatly simplifies the design process as the transistor is already in its correct linear state when power is applied. This makes it an ideal choice for cost-effective and reliable circuit design.
The FMA4AT148 array is able to operate at high-speeds up to 100MHz. This makes it suitable for a variety of high-speed switching and data processing applications. It also has a low power dissipation, making it suitable for use in battery powered or low-voltage applications. It is relatively inexpensive compared to other pre-biased transistors, making it an attractive choice for a variety of applications.
In summary, the FMA4AT148 is a pre-biased array of BJTs specially designed for high-speed switching and data processing applications. Its pre-biased voltage simplifies the design process, and it is able to provide high-current gain and low power dissipation at speeds up to 100MHz. Additionally, it is relatively inexpensive compared to other pre-biased arrays. All these features make the FMA4AT148 an attractive and reliable choice for a wide variety of circuit design applications.
The specific data is subject to PDF, and the above content is for reference
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