Allicdata Part #: | FMBM5551TR-ND |
Manufacturer Part#: |
FMBM5551 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 0.6A SSOT-6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 6... |
DataSheet: | FMBM5551 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 700mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Base Part Number: | FMBM5551 |
Description
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The FMBM5551 is a high-performance, medium-power bipolar npn transistor array. It is designed for general purpose linear applications such as low voltage amplifiers, driver circuits and switches.The device consists of two emulator-temperature independent transistors (ETIATs). An ETIAT is an optimized three-terminal device combining a transistor, a JFET, and a Schottky diode. The combination provides excellent electrical performance over the whole operating temperature range and simplifies design by eliminating essential components from the circuit.The FMBM5551 has a high maximum output current of 4.4 mA and an On-resistance of 7.4Ω, making it suitable for use as a low-impedance switch. In addition, it has low offset voltage and good thermal stability, making it suitable for use in linear applications. The FMBM5551 also has a reverse voltage of -2.8 V and a leakage current of 1 nA.Working PrincipleThe FMBM5551 is an integrated duplex emitter-coupled transistor array, with each transistor consisting of an emitter, a base, and a collector. The base of each transistor is connected to a common emitter terminal, while the emitters and collectors of each pair of transistors are connected to different collector terminals. Each pair of transistors is then connected to a supply voltage and the outputs are provided from the collector terminals.The transistors of the array are biased via a resistor connected between the base and the supply voltage. When a signal is applied to the base, it causes the transistors to switch on, resulting in a current flow between the emitters and the collectors. This current is then amplified by the two transistors and is output from the collector terminals.The FMBM5551 can be used in a variety of linear and switching applications due to its high output current and low-resistance characteristics. In linear applications, it can be used to amplify small signals or as a low-impedance switch. In switching applications, it is used as a means of switching higher-current signals.ConclusionThe FMBM5551 is a high-performance, medium-power bipolar npn transistor array designed for general-purpose linear applications such as low-voltage amplifiers, driver circuits, and switches. It has a high maximum output current of 4.4 mA and a low offset voltage. In addition, it has good thermal stability, low on-resistance, and a reverse voltage of -2.8 V. The FMBM5551 can be used in various linear and switching applications due to its high output current and low-resistance characteristics.
The specific data is subject to PDF, and the above content is for reference
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