FMG3AT148 Allicdata Electronics
Allicdata Part #:

FMG3AT148TR-ND

Manufacturer Part#:

FMG3AT148

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.3W SMT5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: FMG3AT148 datasheetFMG3AT148 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: *MG3
Supplier Device Package: SMT5
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FMG3AT148 is a transistor array, pre-biased device that consists of four active NPN transistors. It is a Gallium Arsenide (GaAs) based device that is built on an integrated circuit and features an operating voltage of 12 V and a power dissipation of 2 W. The FMG3AT148 is a dual supply NPN array, with each transistor individually pre-biased with a current of 2.5 mA, making it suitable for a variety of applications. This device offers excellent linearity and low noise performance, making it ideal for use in radio communication systems.

The FMG3AT148 is designed to operate as both a linear amplifier and a receiver in radio communication designs. Its fast switching capabilities make it a suitable choice for a radio transmitter, while its low noise characteristics make it ideal for radio receivers. The FMG3AT148 can also be used to design amplifiers with a high gain, high linearity, and low distortion, making it suitable for low-noise amplifier (LNA) design applications.

The basic working principle of the FMG3AT148 transistor array is simple. The four transistors are arranged as an NPN complementary pair, with each transistor arranged as a common-emitter configuration. The input signal from a radio frequency (RF) source is applied to the base of each transistor, causing it to turn on. The collector of each transistor sends a signal to the load, which is then amplified. The load of the transistor array is typically a load resistor.

The gain of the FMG3AT148 transistor array is dependent on the values of the resistors in the load network. By changing the resistor values, the gain of the transistor array can be adjusted to match the desired application. It is also possible to adjust the bias current of the transistors in the array, which can affect the linearity of the amplifier output. The bias current of the transistors can be adjusted by changing the value of the emitter resistors. By adjusting the bias current, the linearity of an amplifier designed with the FMG3AT148 can be improved.

The FMG3AT148 is a versatile, versatile transistor array with a wide range of applications. It can be used for applications such as switching, frequency control, and digital logic. Additionally, its low noise characteristics make it ideal for use as a low-noise amplifier in radio communication systems. The FMG3AT148 can also be used for linear amplifier design, where its bias current can be adjusted to improve the linearity of the output signal.

The specific data is subject to PDF, and the above content is for reference

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