FMM150-0075P Allicdata Electronics
Allicdata Part #:

FMM150-0075P-ND

Manufacturer Part#:

FMM150-0075P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 2N-CH 75V 150A I4-PAC-5
More Detail: Mosfet Array 2 N-Channel (Dual) 75V 150A Through ...
DataSheet: FMM150-0075P datasheetFMM150-0075P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Base Part Number: FMM
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: --
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 75V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tube 
Description

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The FMM150-0075P is an array type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that performs a variety of functions. It is a power metal oxide semiconductor field effect transistor (MOSFET) that operates in the switching mode, enabling low drain saturation voltage and fast switching speed. Its construction comprises of two N-channel MOSFETs with high temperature tolerance, high drain-source breakdown voltage, and low on-state resistance. The FMM150-0075P has a channel-length modulation structure which minimizes the internal drain-source voltage loss, resulting in high efficiency power operation. The FMM150-0075P is suitable for applications including switching power supplies, solid state relays, and high-side drivers as well as other applications.FMM150-0075P comprises of Source (S) and Drain (D) terminations, connected between the source and the drain using a gate material as the gate. It is placed on a package, usually a silicon die that is insulated from the rest of the circuit elements by an insulator. The primary function is to control the flow of electrons between the source and the drain terminals in order to amplify a signal.The working principle of FMM150-0075P is a transfer of electrical current from the source to the drain. When a voltage or current is applied to the gate terminal, this in turn produces a strong electric field, which increases or decreases the resistance between the source and drain. With an increased field, the resistance gets reduced and current is allowed to flow from source to drain. When the electric field is removed, the resistance again increases and no current is allowed to pass through.The FMM150-0075P is ideal for high-efficiency, high-frequency, voltage-controlled applications due to its low on-state resistance, high drain saturation voltage and fast switching speed. It can also be used in applications such as power supplies, motor controllers, uninterruptible power supplies, and other similar applications requiring high-efficiency and high-reliability components. Additionally, with its several features such as wide drain-source voltage range and low threshold voltage, it is suitable for a variety of applications which include motor controllers and driver circuit designs.In conclusion, the FMM150-0075P is a dual N-channel MOSFET array suitable for a variety of applications. It offers low on-state resistance, fast switching speed, and wide drain-source voltage range necessary for efficient power operation. Additionally, its high temperature tolerance makes it suitable for applications that require reliable and long-lasting performance. With its multiple features and high-level of performance, it is an excellent component for a variety of applications, such as switching power supplies, solid state relays, and high-side drivers.

The specific data is subject to PDF, and the above content is for reference

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