FMM300-0055P Allicdata Electronics
Allicdata Part #:

FMM300-0055P-ND

Manufacturer Part#:

FMM300-0055P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 2N-CH 55V 300A I4-PAC-5
More Detail: Mosfet Array 2 N-Channel (Dual) 55V 300A Through ...
DataSheet: FMM300-0055P datasheetFMM300-0055P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 2mA
Base Part Number: FMM
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: --
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A
Drain to Source Voltage (Vdss): 55V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tube 
Description

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FMM300-0055P is a type of MOSFET array. This type of transistor usually contains the gate, source, and drain and is used in a variety of applications. The MOSFET array is typically used in high current applications, such as in motor control, switching power supplies, bridge rectifiers, and in power circuits. The FMM300-0055P is particularly designed as a power MOSFET array.

The FMM300-0055P has an array of two Trench MOSFETs, hence the name “Trench MOSFET Array”. The devices have an integrated P-channel MOSFET and an integrated N-channel MOSFET. The P-channel device has a nominal Vgs of -8V, and the N-channel device has a nominal Vgs of 20V. The drain-source breakdown voltage is 135V and the maximum drain current is up to 25A.

The FMM300-0055P has a number of advantages over other power MOSFETs. Firstly, it has higher switching speeds than other power MOSFETs. This makes it ideal for applications where fast switching is necessary, such as power supplies, motor controls, and bridge rectifiers. Secondly, the FMM300-0055P has a low on-resistance, which enables it to operate efficiently in a wide range of current levels. This makes it ideal for applications where high current is necessary, such as motor control.

The working principle of the FMM300-0055P is based on the principle of a MOSFET transistor. A MOSFET transistor works by controlling the current that flows through it by changing the voltage applied to its gate. When the gate voltage is lower than the source voltage, the drain-to-source voltage decreases and the current through the transistor decreases. When the gate voltage is increased, the drain-to-source voltage increases and the current through the transistor increases.

The FMM300-0055P is typically used for applications that require high current handling capability. Such applications include motor control, switching power supplies, and high current rectifiers. The devices can also be used for high speed switching in DC-DC converters and amplifiers. The FMM300-0055P is also suitable for high frequency switching applications, due to its low on-resistance.

In conclusion, the FMM300-0055P is a type of MOSFET array designed for use in high current applications. The devices have an integrated P-Channel MOSFET and an integrated N-Channel MOSFET, and are suitable for use in high current, high speed, and high frequency switching applications. The working principle of the device is based on the principle of a MOSFET transistor.

The specific data is subject to PDF, and the above content is for reference

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