FMM50-025TF Allicdata Electronics
Allicdata Part #:

FMM50-025TF-ND

Manufacturer Part#:

FMM50-025TF

Price: $ 10.47
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 2N-CH 250V 30A I4-PAC
More Detail: Mosfet Array 2 N-Channel (Dual) 250V 30A 125W Thro...
DataSheet: FMM50-025TF datasheetFMM50-025TF Datasheet/PDF
Quantity: 1000
25 +: $ 9.51629
Stock 1000Can Ship Immediately
$ 10.47
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Base Part Number: FMM
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 250V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tube 
Description

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The FMM50-025TF is a semiconductor device that belongs to the field of Transistors - FETs, MOSFETs - Arrays. It consists of an integrated system of five N-channel enhancement mode MOSFETs in a fully molded surface mounting SOP-8 package. The device includes two independent associated groups of five N-channel MOSFETs and it is designed to provide a simple and economical solution for low voltage power applications.

This device has many applications, such as in audio amplifiers and power switchers. By replacing larger discrete parts that are usually required for these applications, the FMM50-025TF reduces the size and cost of the system. In addition, this device also provides an acceptable level of noise and high performance due to its low signal modulation.

The product has a specified bandwidth of up to 29HZZ. It has a drain-to-source on-resistance of 25mΩ max, a drain current of 500mA and a drain-source breakdown voltage of 25V. It operates at a junction temperature range of -55°C to +150°C and has a maximum thermal resistance of 2.0°C/W. It has a maximum total gate charge of 46nC.

The working principle of this device is based on the field effect process. The electric field between the gate and the source of the transistor will control the current flow in the channel between the source and the drain. When the gate is unbiased, the channel between the source and the drain is turned off and no current flows in the device. When the gate is biased, an electric field will be generated and attract electrons from the source region to the drain region, thus creating a channel for current flow.

The FMM50-025TF supports several operating modes and can be used as an inverter, a buffer and a switch. In inverter mode, the device can be used as an inverter amplifier that can amplify the output voltage to a maximum voltage of +48V. In buffer mode, the device can be used as a low impedance buffer amplifier that can prevent the output being affected by the load capacitance. In switching mode, the device can switch ON and OFF at a certain frequency and can be used for various applications.

In conclusion, the FMM50-025TF is a semiconductor device that belongs to the field of Transistors - FETs, MOSFETs - Arrays. It consists of an integrated system of five N-channel enhancement mode MOSFETs and offers an excellent performance in terms of bandwidth, on-resistance, drain current, and breakdown voltage. In addition, it supports several operating modes, such as inverter, buffer, and switch. The device is highly suitable for use in audio amplifiers and power switcher applications.

The specific data is subject to PDF, and the above content is for reference

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