FMM65-015P

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The FMM65-015P is a field effect transistor (FET) array manufactured by Fairchild Semiconductor. This transistor array includes two independent N-channel MOSFETs integrated together into a single package. The N-channel configuration creates a high electron mobility which allows for faster device switching times. Additionally, the integrated package is designed for use in data entry and telecommunication applications utilizing ultra-low power consumption.

The FMM65-015P is quite versatile with a wide variety of operating temperatures and power supply voltages. It can operate anywhere from -40 to +125 degree Celsius with a power supply voltage between 4.5 and 18 Volts. For applications requiring low-Voltage operation, the FMM65-015P can also operate down to 3.0 Volts.

In terms of its application field, the FMM65-015P is designed specifically for the telecommunications industry. It is well suited for digital cordless communication systems, GSM/ DCS, WAP (Wireless Application Protocol) and LTE applications. The low-power consumption makes it highly suitable for digital cordless and mobile phone applications, especially as compared to other solutions. Furthermore, the FMM65-015P can serve in other applications as well, including computer, consumer and industrial electronics.

The FMM65-015P’s working principle is based on the concept of electron mobility. Electron mobility is the rate at which an electron can freely move through a semiconductor material. This rate is affected by the variance of electric field within the semiconductor. As such, the higher the electric field within the material, the higher the electron mobility.

In the FMM65-015P, the N-channel MOSFETs utilize this concept to facilitate fast switching. This is done by altering the electric field within the transistor by voltaic control of the gate voltage. Since greater electric fields provide greater electron mobility, the resultant switching takes place faster than if no electric field were present. As such, the FMM65-015P is able to offer fast switching times and low-power consumption in applications requiring digital cordless communication.

In summary, the FMM65-015P is an N-channel FET array designed for applications in digital cordless communication, GSM/ DCS, WAP and LTE applications. Its low-power consumption and wide array of operating temperatures and supply voltages makes it well suited for these types of applications. The FMM65-015P’s working principle utilizes electron mobility as well as voltaic control of the gate voltage to facilitate fast switching. As such, it is a highly capable solution in the world of telecommunications.

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