FPN560A Allicdata Electronics
Allicdata Part #:

FPN560A-ND

Manufacturer Part#:

FPN560A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 3A TO-226
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 75MHz 1W Throu...
DataSheet: FPN560A datasheetFPN560A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-226
Base Part Number: FPN560
Description

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FPN560A is a type of single bipolar junction transistor (BJT). It is used in amplifier applications due to its high speed switching capability and low power consumption. It can be used in switching circuits, and in some cases, even as a replacement for a regular transistor. FPN560A has an operating temperature range of -55°C to +150°C and is a 130W transistor.

The FPN560A features a starting voltage of 1V to 2V, and an output current of 600mA. It is a p-channel transistor and has an amplifier gain of approximately 200. With a low power consumption rate and low current noise, the FPN560A is capable of providing a clean and efficient signal output. FPN560A is commonly used in switching applications where a large input signal is required and fast switching time is required.

The working principle of FPN560A is based on the bipolar junction transistor (BJT) principal. A BJT is an electronic device which consists of two junctions between two semiconductor layers. They are typically made from two different types of semiconductor materials, either n-type and p-type, or the other way around. A BJT is capable of controlling the current flow between two terminals without the need for an external power supply.

When a positive input signal is applied to the base of the FPN560A, it creates a few electrons that move through the base region to the collector. This in turn causes holes to be created in the collector region. The difference in number of electrons and holes produces a current, which is proportional to the voltage applied at the base. The amount of current that flows depends on the amount of input signal passed to the base. This current is then amplified to a larger signal at the output.

FPN560A is typically used in amplifiers, switching circuits, and as an alternative to regular transistors. It is an excellent choice for applications that require high speed switching and low power consumption. Its high voltage gain and quick switching capability make it ideal for applications that require fast response times and high output. As a 130W transistor, it is also relatively cheap compared to other transistors available in the market.

In summary, FPN560A is a type of single bipolar junction transistor (BJT). It features a starting voltage of 1V to 2V and an output current of 600mA. It is capable of controlling the current flow between two terminals without the need for an external power supply. With its high voltage gain and quick switching capability, it can be used in amplifier applications as well as switching circuits and as an alternative to regular transistors. It is a great cost effective choice for applications that require fast switching and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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