FT25C64A-USR-T Integrated Circuits (ICs)

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Memory technology has become a rapidly growing field and made huge increases in the amount of information that can be stored, processed, and accessed by the processors. FT25C64A-USR-T is a high-density 64 KiB (8 KiB x 8) Serial Memory which is especially suitable for non-volatile storage of parameters, fonts, images, and general customer application data. It has also held monumental data storage applications for entire internet sites, entire e-mail systems, and various other types of applications that require extremely large data storage.

Application Field of FT25C64A-USR-T

FT25C64A-USR-T is a type of serial memory which is intended for low power, low voltage, and low pin count operation. It uses a 64 KiB (8 KiBx 8) array in a non-volatile memory. The memory element is arranged in a 4 x 16 array, with a total of 64 pins, each of which is an input, output, or input/output pin. The memory array is organized into 256 addressable bytes, with each byte addressable with 8-bit words. The chip supports an eight-bit I/O bus and a 1.65-V to 1.95-V operating voltage range. This allows the FT25C64A-USR-T to be used in systems running at low voltages such as computers, handheld devices, and other consumer electronics.

The FT25C64A-USR-T provides the user with a variety of features that make it attractive for use in numerous applications. It operates at a maximum frequency of up to 100 MHz, enabling fast data transfers to and from the IC. Low standby currents and fast write times also make the FT25C64A-USR-T suitable for low power applications, including smart cards and RFID tags. This memory also features an automated low-power sleep mode that helps conserve power.

FT25C64A-USR-T is ideal for use in programs that require high-density data storage, such as images, fonts, audio and video files, and other multimedia applications. It is also suitable for applications such as non-volatile storage of customer data, automated data logging, secure databases, and other memory-intensive applications. This memory also supports standard SPI and I2C protocols for communication with a host device.

Working Principle

The FT25C64A-USR-T is based on a four-transistor memory cell architecture. This provides an Advanced Single-Level Cell (ASLC) memory device that is suitable for high-density non-volatile memory applications. Each memory cell has two transistors, one of which is a standard MOSFET and the other which is a transfer gate. The transistors are arranged in a configuration that creates a latch which stores the data. The FT25C64A-USR-T is organized into 256 bytes that are addressable as 8-bit words.

When power is applied to the memory device, the cells are initialized to their default values and data can be read or written to them. A select line and a write line activate the transfer gate based on the data being read or written. Once the data is written it is latched into the memory cell and held until power is removed. Data can then be read from the memory cells using the same select and write lines.

The FT25C64A-USR-T also supports an automatic low-power sleep mode. This allows the device to enter a low power state when idle. This reduces power consumption and increases battery life in applications where the device is constantly in use.

The FT25C64A-USR-T is an ideal memory device for a variety of applications. Its small size, low power requirements, flexible I/O options, and fast write times make it suitable for use in energy-efficient systems. It is an excellent choice for applications that require high-density data storage, such as digital images, audio, and video files.

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