FT25L04T-RB

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FT25L04T-RB is a type of Non-Volatile Memory, meaning it stores and keeps data even without an external power source. It is a 4Mbit (512Kbyte) memory which is very suitable for embedded applications where a high-density non-volatile memory is needed. The FT25L04T-RB offers fast programming and erase times, small package size and low current consumption, along with excellent write and erase endurance, making it an ideal solution for applications such as data logging and records, security log and system data maintenance.

The FT25L04T-RB is mostly used in embedded systems such as microcontroller-based products, embedded processors, and embedded applications. The chip is manufactured in a small QFN8 or TSSOP-8 package, so it is ideal for compact applications where size and appearance are important factors for a project. Other than its small size, the FT25L04T-RB also consumes a very low amount of power, making it a great candidate for battery-powered applications. Its low power consumption also allows it to be used in close proximity to sensitive analog circuits, in order to prevent any potential interference.

The FT25L04T-RB is flash memory, meaning it does not need to be reloaded each time it is powered up. It provides a fast read access time as well as fast erase and write times. It has a high endurance cycle, meaning it can be erased and rewritten with fewer cycles than other types of memories. Furthermore, the FT25L04T-RB also includes an array of features to protect its data integrity and maximize product life, such as the secure erase feature, which erases the memory in a single operation and protects data stored in non-volatile memory.

The working principle of the FT25L04T-RB is based on Charge Trap Flash (CTF) technology, which is a non-volatile memory technology. In this technology, the memory cells are arranged in a matrix, which consists of rows and columns. The cells are grouped together in blocks, and each block contains multiple pages. To program or erase a block or page, a voltage higher than a certain threshold must be applied for a specific duration, along with some other required operations. In order to read a block or page, the cells are activated and the charges are transferred to the output for processing. The voltage applied for the read operation is much lower than the voltage applied for programming or erasing, and it does not cause any bank to be programmed or erased. Thus, the CTF technology can guarantee the reliability and endurance of the memory.

The FT25L04T-RB is a powerful memory device with many applications in embedded systems. It offers a small package size, low power consumption, fast access and erase times, and high durability. It is suitable for applications such as system data maintenance, security logging, and data logging or records. The FT25L04T-RB is an ideal solution for embedded systems and other applications where a reliable and powerful memory is needed.

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