Allicdata Part #: | FW389-TL-2WOSTR-ND |
Manufacturer Part#: |
FW389-TL-2W |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 100V 2A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 100V 2A 1.8W Surface ... |
DataSheet: | FW389-TL-2W Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25137 |
5000 +: | $ 0.23880 |
12500 +: | $ 0.22982 |
25000 +: | $ 0.22264 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 2A |
Rds On (Max) @ Id, Vgs: | 225 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 10V |
Power - Max: | 1.8W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The FW389-TL-2W is a 2-way phase FET array designed for use in audio equipment and general power control applications. It is a monolithic array with two N-channel MOSFETs, each of which has 25V drain-to-source voltage and 3mΩ on resistance. This device is ideal for use in switching power transistors, audio amplifiers, and other applications where efficient operation is required. It can also be used for radio frequency (RF) and switching applications.
The FW389-TL-2W uses a power field-effect transistor (FET) array as its switching mechanism. FETs are special transistors designed for use in high-power applications. They are constructed of two resistive and two capacitor layers, and they usually feature a "gate" which controls the flow of current between the source and the drain. FETs have several advantages over traditional transistors, including higher switching speeds and better efficiency.
The source and drain terminals of the FW389-TL-2W are connected together in order to create a single, two-way FET. This configuration allows for rapid switching between power components and allows for an efficient, low-noise power supply operation. This transistor\'s gate voltage is between 3 V and 25 V, and the gate capacitance is 75 pF.
The FW389-TL-2W is able to provide excellent performance in power control applications. The presence of two FETs in the array, each acting as a "switch" between the power component and the power supply, means that power can be transferred rapidly and efficiently. This makes it ideal for use in audio amplifiers and other high-power switching applications.
The device\'s gate-source capacitance is also highly useful in improving the efficiency of the device. Lower gate-source capacitance means higher switching speeds, and this can lead to a more efficient device. Furthermore, the presence of two FETs allows for the transfer of higher power. This means that a larger current can be controlled with the same voltage.
The FW389-TL-2W is also able to provide reliable operation over a wide range of input voltages. This is due to the device\'s small physical footprint and the low dissipation losses it experiences. This allows for more flexibility in engineering solutions and makes it suitable for use in a variety of applications.
Overall, the FW389-TL-2W is an excellent choice for modern electronics applications. Its small size, high switching speed, and low power dissipation make it an ideal choice for power control and audio amplifier applications. Its two-way FET structure also makes it suited for radio-frequency and switching applications.
The specific data is subject to PDF, and the above content is for reference
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