Allicdata Part #: | FW811-TL-E-ND |
Manufacturer Part#: |
FW811-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 35V 8A 8SOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 35V 8A 2.2W Surfac... |
DataSheet: | FW811-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 20V |
Power - Max: | 2.2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
Description
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<p>The FW811-TL-E is a field-effect transistor (FET) array. It is made up of two N-channel FETs in one package, and it provides a low on-resistance of only 8 µV. It is widely used in power equipment and other high-power applications due to its ability to carry large amounts of current.The FW811-TL-E is an N-channel FET array consisting of two FETs in a single package. It has high linearity and low on-resistance which makes it ideal for high-power applications. Each FET has a drain-to-gate voltage rating of 80 V, a drain current rating of 12 A, and a gate-to-source voltage rating of 40 V. It is also equipped with a surface-mountable package which makes it well suited for a wide range of applications.The FW811-TL-E is a voltage-controlled device, meaning that when the voltage at its gate terminal is varied, its drain current is also varied accordingly. This enables it to act as a switch in circuits, allowing the signal to turn the device on and off. To ensure stable operation, the device has an internal self-clamping diode which enacts overvoltage protection for the device.In its most basic form, the FW811-TL-E can be used as a voltage-activated switch in a circuit. The FETs positive charge creates an electric field across the gate-source junction, and when a voltage is applied to the gate, the electrons in the gate are attracted to the positive charge, allowing current to flow through the device. This can be used to control the state of a device, either enabling or disabling its operation.The FW811-TL-E can also be used as a voltage-regulated amplifier. By connecting an input signal to the gate, and an output load to the drain, the FW811-TL-E can be used to amplify signals. The voltage-controlled gate of the FET allows the gain of the amplifier to be increased or decreased depending on the input signal.The FW811-TL-E can also be used in many other applications, including switch mode power supplies, motor speed control, and power switching. Due to its high power handling capabilities, it is a great choice for applications requiring high-power without sacrificing linearity or on-resistance.</p>The specific data is subject to PDF, and the above content is for reference
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