Allicdata Part #: | FZ1600R17HP4B21BOSA2-ND |
Manufacturer Part#: |
FZ1600R17HP4B21BOSA2 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT IHMB130-1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 16... |
DataSheet: | FZ1600R17HP4B21BOSA2 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 1600A |
Power - Max: | 10500W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 1600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 130nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FZ1600R17HP4B21BOSA2 is a high-frequency IGBT module developed by the company which belongs to the Transistors - IGBTs - Modules field. It is mainly applied in EV electric drive system and the power frequency range is usually 50Hz-13.56MHz. It has a more suitable application in the electric drive system which is available even at the peak of dynamic load.
FZ1600R17HP4B21BOSA2 is composed of four TO-247 packages which has a low voltage blocking capability up to 1700V with a current capacity of up to 800A, as well as a soft turn-off/turn on speed. This module has four isolated gate drivers which enable a better miniaturization, the isolated gate drive provides very fast device turn-off time, thus providing higher power efficiency.
The basic working principle of FZ1600R17HP4B21BOSA2 can be explained as follows: during the open drain on condition, the current path between emitter and collector is engaged allowing the charge to flow, thus providing an increased voltage at the input terminals of the device, opening the drain valve, allowing the voltage to increase. The increase in voltage generates an electromagnetic field, which then increase enough to switch the IGBTs on, providing a path between the emitter and collector and allowing a switch-on current to flow.
The device works with a minimum gate threshold voltage of 4.3V and a low on-state voltage drop of 1.2V. It has an integral heat sink and a wide operating temperature range of -40°C to 125°C for maximum efficiency. Furthermore, FZ1600R17HP4B21BOSA2 has over-current protection, short-circuit protection, short-circuit protection, and under-voltage protection features, in order to ensure the power flow towards the motor safely.
In summary, FZ1600R17HP4B21BOSA2 can be classified as an IGBT module, which belongs to Transistors - IGBTs - Modules. It is typically used in EV electric drive systems. It is composed of four TO-247 packages, with a low voltage blocking capability of 1700V and a current capacity of up to 800A. The working principle of FZ1600R17HP4B21BOSA2 is to create an electromagnetic field which switches the device on and provides a path for power transfer safely. It provides a wide operating temperature range, over-current protection, short-circuit protection, and under-voltage protection features as well, making sure it is a highly reliable application.
The specific data is subject to PDF, and the above content is for reference
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