FZ1600R17HP4HOSA2

Series:	--
Part Status:	Active
IGBT Type:	Trench
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1700V
Current - Collector (Ic) (Max):	1600A
Power - Max:	10500W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 1300A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	130nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FZ1600R17HP4HOSA2 Application Field and Working Principle

Transistors are a type of semiconductor device that can be used to amplify and switch electrical signals. Among them, IGBTs, or insulated gate bipolar transistors, have the advantage of having both bipolar and Field Effect Transistor (FET) characteristics, and are thus used for high speed switching applications in many different industry sectors. IGBT modules are assemblies containing multiple IGBTs connected in parallel, and the FZ1600R17HP4HOSA2 module from Fronius AG is one such module commonly used for switching purposes. The FZ1600R17HP4HOSA2 module is a four-channel IGBT module based on Insulated Gate Commutated Thyristors (IGCTs) or Insulated Gate Bipolar Transistors (IGBTs). It has an average IGBT on-state resistance of 35 mOhm, a collector-emitter blocking voltage of 1600V, an IGBT gate blocking voltage of 17.5V and an operating temperature range of -40°C to +125°C. This module is suitable for a wide range of applications, including motor control, inverter, motor drive, UPS, uninterruptible power supply, traction, energy storage, electro-mechanical control, etc. The working principle of the FZ1600R17HP4HOSA2 module is based on the operation of an IGBT. Its three-pin structure comprises an anode (also called the gate), anode-cathode (also called the collector-emitter, respectively) and a cathode (also called the emitter). When an electrical signal is applied to the gate, a current flow occurs between the collector and the emitter and the device switches which is what allows the device to be used for switching. The four IGBTs in the FZ1600R17HP4HOSA2 module are designed to provide a highly efficient and reliable operation, with four different switching and control configurations. The main features of this module include fast switching times, high dv/dt capability, low power dissipation and low gate drive. The high dv/dt and low power dissipation are due to the IGBTs having a low on-state resistance, and the low gate drive is due to the use of a low-power switching gate driver. The FZ1600R17HP4HOSA2 module is an advanced solution for power electronics applications, with a high degree of flexibility and performance. It is designed to be highly reliable, suitable for a wide range of switching requirements, and offers an exceptional switching performance with a minimum of power losses. It is also designed to meet the requirements of high-current and high-voltage applications with its 1600V collector-emitter blocking voltage. In conclusion, the FZ1600R17HP4HOSA2 module has many advantages and can be used in a wide range of applications such as motor control, inverter, motor drive, UPS, uninterruptible power supply, traction, energy storage, electro-mechanical control, etc. Its working principle is based on the operation of an IGBT, and it provides high efficiency and reliable operation with low power losses and a minimum of gate drive. Its high performance and flexible configurations make it ideal for use in power electronics applications.

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